Abstract
The photoluminescence and electrical properties are compared for silicon-oxide layers containing Si nanocrystals and having different Si content. The oxide was deposited by co-sputtering of silicon dioxide and silicon with the subsequent annealing for the formation of nanocrystals. Excess Si content in the layer varies along the sample from 6 to 74 vol %. It is found that a charge magnitude determined from the flat-band voltage has a pronounced peak for the excess Si content of about 26%, the largest charge correlating with the highest photoluminescence intensity. The further increase in the excess Si content in oxide leads to a decrease in both the oxide charge and the photoluminescence intensity and to the appearance of percolation conductivity.
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Original Russian Text © I.V. Antonova, M.B. Gulyaev, Z.Sh. Yanovitskaya, VA. Volodin, D.V. Marin, M.D. Efremov, Y. Goldstein, J. Jedrzejewski, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 10, pp. 1229–1235.
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Antonova, I.V., Gulyaev, M.B., Yanovitskaya, Z.S. et al. Electrical properties and photoluminescence of SiOx layers with Si nanocrystals in relation to the SiOx composition. Semiconductors 40, 1198–1203 (2006). https://doi.org/10.1134/S1063782606100137
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DOI: https://doi.org/10.1134/S1063782606100137