Abstract
High-efficiency GaSb-based photovoltaic cells designed for conversion of high-power laser radiation and infrared radiation of emitters heated by concentrated solar radiation are fabricated and studied. The maximum efficiency of conversion of the radiation with λ = 1680 nm was 49% at the photocurrent density of 50–100 A/cm2 for the fabricated photovoltaic cells. The methods for reducing the losses at ohmic contacts to p-and n-GaSb are investigated. The minimum values of the specific resistance, (1–3) × 10−6 Θ cm2, of contact to p-GaSb with the doping level of 1020 cm−3 were obtained using the Ti/Pt/Au contact system. The minimum values of the specific contact resistance were (1–3) × 10−6 Θ cm2 in the case of n-GaSb with the doping level of 2 × 1018 cm−3 if the Au(Ge)/Ni/Au and Au/Ni/Au contact systems are used.
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Original Russian Text © V.P. Khvostikov, M.G. Rastegaeva, O.A. Khvostikova, S.V. Sorokina, A.V. Malevskaya, M.Z. Shvarts, A.N. Andreev, D.V. Davydov, V.M. Andreev, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 10, pp. 1275–1279.
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Khvostikov, V.P., Rastegaeva, M.G., Khvostikova, O.A. et al. High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide. Semiconductors 40, 1242–1246 (2006). https://doi.org/10.1134/S1063782606100216
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DOI: https://doi.org/10.1134/S1063782606100216