Abstract
A simple nondestructive method to find the internal surface area, porosity, pore diameter, and pore density in macroporous silicon with through channels is suggested and tested. The porosity p is determined from the mass loss upon anodizing, and the surface area per unit volume, S v , from the mass of SiO2 formed on the pore surface upon thermal oxidation. The relations are given for calculation of the average pore diameter d and pore density N from the obtained S v and p. Dependences of the specific surface area and porosity on the resistivity of initial n-Si in the range ρ = 3–25 Θ cm have been studied for samples with ordered and self-organized “lattices” of macropores. The obtained values are within the limits p = 27–50%, S v = 2800–6000 cm2/cm3, d = 1.9–6.5 μm, and N = 1.4−10 × 106 cm−2, in agreement with the data fumished by microscopy.
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Original Russian Text © A.A. Nechitaĭlov, E.V. Astrova, Yu.A. Kukushkina, S.Yu. Kameneva, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 10, pp. 1254–1258.
The study was ordered and supported by the National Innovation Company “New Projects in Power Engineering.”
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Nechitaĭlov, A.A., Astrova, E.V., Kukushkina, Y.A. et al. Oxidative-gravimetric porosimetry of macroporous silicon. Semiconductors 40, 1222–1226 (2006). https://doi.org/10.1134/S1063782606100174
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DOI: https://doi.org/10.1134/S1063782606100174