Abstract
Photoluminescence properties of erbium-doped silicon dioxide layers containing silicon nanocrystals with 1.5–4.5 nm average size are investigated. It is found that the intensity and mean lifetime of the Er3+-ion photoluminescence depend on the nanocrystal size, optical pump intensity, and temperature. The results obtained are explained both by the effect of the local environment on Er3+ ions and by the manifestation of nonradiative deexcitation of ions caused by the transfer of energy back into the solid-state matrix and the Auger processes.
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Original Russian Text © D.M. Zhigunov, O.A. Shalygina, S.A. Teterukov, V.Yu. Timoshenko, P.K. Kashkarov, M. Zacharias, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 10, pp. 1224–1228.
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Zhigunov, D.M., Shalygina, O.A., Teterukov, S.A. et al. Photoluminescence of erbium ions in heterostructures with silicon nanocrystals. Semiconductors 40, 1193–1197 (2006). https://doi.org/10.1134/S1063782606100125
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DOI: https://doi.org/10.1134/S1063782606100125