Abstract
Crystalline Si implanted with the 380-keV cobalt ions with the dose Φ = 1014−1016 cm−2 is studied. The method of Rutherford backscattering is used to determine the Si amorphization threshold (Φ = 3 × 1014 cm−2). A quasi-resonance anisotropic line with a width of approximately 170 mT is observed at a temperature of T = 78 K in the spectrum of the electron spin resonance of silicon implanted with Co+ ions with Φ ≥ 3 × 1014) cm−2. A resonance signal of paramagnetic centers in amorphous Si regions (g = 2.0057 and δB = 0.74 mT) is observed against the background of the above line. A quasi-resonance line of the electron spin resonance related to Co atoms and intrinsic Si defects was not observed at T = 300 K.
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Original Russian Text © N.A. Poklonskiĭ, N.M. Lapchuk, A.O. Korobko, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 10, pp. 1181–1184.
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Poklonskiĭ, N.A., Lapchuk, N.M. & Korobko, A.O. Magnetic ordering in crystalline Si implanted with Co ions with intermediate doses. Semiconductors 40, 1151–1154 (2006). https://doi.org/10.1134/S1063782606100058
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DOI: https://doi.org/10.1134/S1063782606100058