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Influence of holmium impurities on photoelectric properties of As2Se3 and (As2S3)0.3(As2Se3)0.7

  • Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites
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Abstract

The influence of a holmium impurity on the photoelectric properties of bulk and film As2Se3 and (As2S3)0.3(As2Se3)0.7 samples is studied. Measurements of the relative photoconductivity of bulk samples and the spectral distribution of the persistent photoconductivity in film samples showed an increase in the photoconductivity of materials doped with holmium to concentrations equivalent to 0.010–0.015 at %. The spectral distribution of the persistent photoconductivity and optical absorption showed that the band gap monotonically decreases from 1.88 to 1.85 eV for As2Se3 and from 2.05 to 2.00 eV for (As2S3)0.3(As2Se3)0.7 as Ho concentration increases to 0.015 at %, and then weakly increases to the values in initial pure materials.

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Authors and Affiliations

  1. Shevchenko Dniester State University, Tiraspol, 3300, Moldova

    I. I. Burdiyan, E. A. Senokosov, V. V. Kosyuk & R. A. Pynzar’

Authors
  1. I. I. Burdiyan
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  2. E. A. Senokosov
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  3. V. V. Kosyuk
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  4. R. A. Pynzar’
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Additional information

Original Russian Text © I.I. Burdiyan, E.A. Senokosov, V.V. Kosyuk, R.A. Pynzar’, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 10, pp. 1250–1253.

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Burdiyan, I.I., Senokosov, E.A., Kosyuk, V.V. et al. Influence of holmium impurities on photoelectric properties of As2Se3 and (As2S3)0.3(As2Se3)0.7 . Semiconductors 40, 1218–1221 (2006). https://doi.org/10.1134/S1063782606100162

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  • DOI: https://doi.org/10.1134/S1063782606100162

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