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Simulation of capacitance-voltage characteristics of heterostructures with quantum wells using a self-consistent solution of the Schrödinger and Poisson equations

  • Low-Dimensional Systems
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Abstract

Methods are developed for calculating capacitance-voltage characteristics and finding the concentration profile of free charge carriers in semiconductor doped heterostructures containing a quantum well. The capacitance-voltage characteristic of a heterostructure with a quantum well was calculated using a numerical self-consistent solution of the Poisson and Schrödinger equations in the context of a unified quantum-mechanical approach. The suggested method was applied to the simulation and analysis of the experimental capacitance-voltage characteristics of heterostructures with strained InGaAs/GaAs quantum wells.

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Authors and Affiliations

  1. St. Petersburg State University of Electrical Engineering “LETI”, St. Petersburg, 197376, Russia

    V. I. Zubkov

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  1. V. I. Zubkov
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Original Russian Text © V.I. Zubkov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 10, pp. 1236–1240.

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Zubkov, V.I. Simulation of capacitance-voltage characteristics of heterostructures with quantum wells using a self-consistent solution of the Schrödinger and Poisson equations. Semiconductors 40, 1204–1208 (2006). https://doi.org/10.1134/S1063782606100149

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  • DOI: https://doi.org/10.1134/S1063782606100149

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