Abstract
Temperature dependence of the threshold current for VCSELs based on submonolayer InGaAs QDs is studied experimentally. It is shown that detuning between the lasing wavelength and the gain spectrum peak must be used for a correct description of the temperature characteristics of laser diodes. An expression for describing the temperature dependence of the VCSEL threshold current is proposed, which takes into account not only the reduction of the maximum gain of the active region with rising temperature, but also the effect of the temperature dependence of detuning.
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Original Russian Text © S.A. Blokhin, A.V. Sakharov, N.A. Maleev, A.G. Kuz’menkov, I.I. Novikov, N.Yu. Gordeev, Yu.M. Shernyakov, M.V. Maximov, V.M. Ustinov, A.R. Kovsh, S.S. Mikhrin, N.N. Ledentsov, G. Lee, J.Y. Chi, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 10, pp. 1264–1269.
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Blokhin, S.A., Sakharov, A.V., Maleev, N.A. et al. Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs. Semiconductors 40, 1232–1236 (2006). https://doi.org/10.1134/S1063782606100198
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DOI: https://doi.org/10.1134/S1063782606100198