Abstract
The kinetics of microwavemicrowave photoconductivity of CdSe films is investigated. The films were obtained via pyrolysis of aerosol of aqueous solutions of thiourea coordination compounds on quartz and Sitall substrates in the temperature range T s = 300–600°C. To characterize the films, the analysis of X-ray diffraction patterns and the optical absorption and reflection spectra was used. The microwavemicrowave photoconductivity, which was induced by laser pulses of duration 10 ns at the wavelength 337 nm, was investigated by the resonator method at 295 K in the ranges 9 and 36 GHz. The kinetics of annihilation of photoelectrons, which determine the time characteristics of the photoresponse, depended on the sample temperature T and incident illumination intensity I. The first-order annihilation kinetics was observed for the films obtained at T s < 400°C. At T > 450°C, the annihilation kinetics corresponded neither to the first nor to the second order at low values of I. However, it attained the second-order kinetics at high I > 1014 photon/cm2 per pulse.
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Original Russian Text © Yu.V. Meteleva, G.F. Novikov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 10, pp. 1167–1174.
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Meteleva, Y.V., Novikov, G.F. Fabrication and microwavemicrowave photoconductivity of CdSe semiconductor films. Semiconductors 40, 1137–1144 (2006). https://doi.org/10.1134/S1063782606100034
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DOI: https://doi.org/10.1134/S1063782606100034