Abstract
Dependence of the short-circuit photocurrent on the voltage V g applied to the gate of the 6H-SiC planar field-effect transistor is studied. The negative differential photoconductivity appeared at a certain value of V g; the parameters of this photoconductivity corresponded to those of the Wannier-Stark ladders in the natural 6H-SiC super lattice. At the same value of V g, a fairly abrupt decrease to zero of the source-drain current I sd is observed, which is indicative of cutoff at the voltage that is much lower than the expected cutoff voltage for this structure. The effect is attributed to a decrease in mobility in the mode of the Wannier-Stark ladders, a decrease in the rate of ionization of the donor atoms, and a reduction in the screening of the field.
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Original Russian Text © V.I. Sankin, P.P. Shkrebiĭ, A.A. Lebedev, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 10, pp. 1270–1274.
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Sankin, V.I., Shkrebiĭ, P.P. & Lebedev, A.A. The Wannier-Stark effects in the 6H-SiC planar junction field-effect transistors with a p-n junction as the gate. Semiconductors 40, 1237–1241 (2006). https://doi.org/10.1134/S1063782606100204
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DOI: https://doi.org/10.1134/S1063782606100204