Effect of the shape of an approximate potential on the calculation of vibrational levels of diatomic molecules T. I. VelichkoVI. G. Tyuterev Optics and Spectroscopy Pages: 965 - 969
Dependence of the pressure pulse generated in an opticoacoustical receiver on the intensity of the exciting laser pulse Yu. N. PonomarevS. B. PonomarevaB. A. Tikhomirov Optics and Spectroscopy Pages: 969 - 972
Optical constants of natural aerosols in the IR region of the spectrum V. K. Sonchik Optics and Spectroscopy Pages: 973 - 975
Electromagnetic wave radiation by oscillating particles located in a constant electric field S. A. ShishiginYu. D. Kopytin Optics and Spectroscopy Pages: 975 - 978
Electrooptical effect during action of linearly polarized radiation on a particle from an anisotropic dielectric B. V. Kaul' Optics and Spectroscopy Pages: 978 - 982
Magnetic characteristics of ferromagnets containing impurities V. N. FedosovE. I. Chursina Physics of Magnetic Effects Pages: 982 - 986
Influence of magnetization inhomogeneity on the spin-wave resonance spectrum in single crystal films of iron-manganese spinels A. S. ParshinN. S. Chistyakov Physics of Magnetic Effects Pages: 986 - 989
Solitons in a deformed ferromagnet with anisotropy of the easy plane type F. Kh. AbdullaevA. A. Abdumalikov Physics of Magnetic Effects Pages: 989 - 993
Optical and magnetooptical properties of manganese-zinc ferrospinels Sh. Sh. BashkirovV. V. ParfenovM. M. Samigullin Physics of Magnetic Effects Pages: 994 - 998
The magnetic structure of M-type hexaferrites V. I. Mal'tsevE. P. Naiden Physics of Magnetic Effects Pages: 998 - 1000
Calculation of the concentration of the Mössbauer element and the probability of resonant absorption from the electronic nuclear-gamma-resonance spectrum A. B. BateevO. M. VakarYu. V. Petrikin Physics of Magnetic Effects Pages: 1001 - 1007
The growth rate of epitaxial InAs layers as a function of AsCl3 in the InAs-AsCl3-H2 system G. A. AleksandrovaI. V. IvoninA. E. Shubin Physics of Semiconductors and Dielectrics Pages: 1008 - 1010
Investigation of the total conductivity of heterolasers with a strip contact with reverse bias E. K. Karikh Physics of Semiconductors and Dielectrics Pages: 1011 - 1014
Charge transfer and electric strength of thin silicon oxynitride films V. I. KubrinV. F. KorzoM. V. Kacharava Physics of Semiconductors and Dielectrics Pages: 1014 - 1017
Peculiarities of the photoconductivity of GaSe<Sn> single crystals in the fundamental absorption edge region V. N. KaterinchukZ. D. Kovalyuk Physics of Semiconductors and Dielectrics Pages: 1018 - 1020
Conductivity and electron mobility in inversion channels of DMIS structures Sh. M. Gasanli Physics of Semiconductors and Dielectrics Pages: 1021 - 1024
Resonance charge relaxation in physical barrier layers P. T. OreshkinYu. V. GarmashA. I. Perelygin Physics of Semiconductors and Dielectrics Pages: 1024 - 1028
The effects of composition and production technique on the changes induced by light and heat in As-S recording media V. I. MiklaYu. M. VysochanskiiV. O. Stefanovich Physics of Semiconductors and Dielectrics Pages: 1029 - 1032
Annihilation of unthermalized positrons in a silicon single crystal at 77°K Yu. E. ZaitsevLi MungirL. R. Ul'pe Physics of Semiconductors and Dielectrics Pages: 1033 - 1036
Hysteresis in MOS structures based on Hg1−xCdxTe V. V. AntonovA. V. VoitsekhovskiiO. G. Lanskaya Physics of Semiconductors and Dielectrics Pages: 1036 - 1039
Optical charge transfer for the dope in GaAs<Cr> O. V. VakulenkoA. S. SkirdaV. A. Skryshevskii Physics of Semiconductors and Dielectrics Pages: 1039 - 1042
Determination of the position of the Π-ν-junction in epitaxial structures of gallium arsenide doped with iron N. A. ChernovM. D. VilisovaO. M. Asanov Physics of Semiconductors and Dielectrics Pages: 1043 - 1046
Properties of n-type gallium arsenide doped with germanium when single crystals are grown from the melt M. A. KrivovE. V. MalisovaV. B. Osvenskii Physics of Semiconductors and Dielectrics Pages: 1047 - 1050
Effects of growth conditions on the photoluminescence spectra of epitaxial GaAs films made by the hydride method T. S. BabushkinaT. A. ZevekeV. A. Tolomasov Physics of Semiconductors and Dielectrics Pages: 1051 - 1053
Effect of dielectric coating on current-voltage characteristic of Schottky barrier diodes at low temperature V. G. BozhkovO. Yu. Malakhovskii Physics of Semiconductors and Dielectrics Pages: 1053 - 1057
Contraction of the space of electron drift in low-frequency bunchers N. M. GavrilovA. V. Nestorovich Physics of Semiconductors and Dielectrics Pages: 1057 - 1060
