Abstract
Measurements have been made on the electrophysical characteristics of Hg1−xCdxTe MOS structures of n type (Eg = 0.12–0.2 eV) at a working temperature T=77°K.
The experimental results indicate that the hysteresis in the voltage-capacitance characteristics VCC of these MOS structures arises from carrier injection and trapping and also from charge transfer in deep centers DC when the voltage on the field electrode is altered.
It is found that in the frequency range examined, the VCC hysteresis may alter in magnitude and reverse in sign.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 81–84, November, 1983.
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Antonov, V.V., Voitsekhovskii, A.V. & Lanskaya, O.G. Hysteresis in MOS structures based on Hg1−xCdxTe. Soviet Physics Journal 26, 1036–1039 (1983). https://doi.org/10.1007/BF00896669
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DOI: https://doi.org/10.1007/BF00896669