Soviet Physics Journal

, Volume 26, Issue 11, pp 1051–1053 | Cite as

Effects of growth conditions on the photoluminescence spectra of epitaxial GaAs films made by the hydride method

  • T. S. Babushkina
  • T. A. Zeveke
  • I. G. Malkina
  • V. A. Tolomasov
Physics of Semiconductors and Dielectrics


A study has been made of the effects of growth temperature and vapor-gas mixture composition in the diffusion region on the photoluminescence spectra at 77°K for GaAs films. It is shown that the growing film takes up an uncontrolled impurity whose level lies at a depth of 0.026 ±- 0.003 eV, which is determined by the ratio of the [AsH3] concentration to [TMG] in the gas phase. In the range 560–670°C, this ratio is controlled by the degree of decomposition of the arsine, while at higher temperatures it is controlled by desorption of this from the surface.


GaAs Growth Condition Hydride Growth Temperature Photoluminescence Spectrum 
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Copyright information

© Plenum Publishing Corporation 1984

Authors and Affiliations

  • T. S. Babushkina
    • 1
  • T. A. Zeveke
    • 1
  • I. G. Malkina
    • 1
  • V. A. Tolomasov
    • 1
  1. 1.Gor'kii Technical Physics Research InstituteLobachevskii UniversityGor'kii

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