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Charge transfer and electric strength of thin silicon oxynitride films

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

The charge transfer mechanism in thin silicon oxynitride films of various oxygen and nitrogen content is investigated. The measurements are carried out in the temperature range 77–500°K and frequency interval 20 Hz to 10 MHz for specimens 10 nm to 20 μm thick, prepared by activation decomposition of tetramethoxylene in nitrogen atmosphere under the action of 220–280 nm UV radiation of 5–25 klx intensity with a substrate temperature of 100–450°C. It is shown that at low frequencies the conductivity has mainly a 2-center hopping while at higher frequencies it has a multicenter phonon-stimulated character with an activation energy of 0.32–0.56 eV and the predominance of a trapping level of an energy up to 2.2 eV.

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Authors and Affiliations

  1. K. E. Tsiolkovskii Institute of Aviation Technology, Moscow

    V. I. Kubrin, V. F. Korzo, E. G. Dorofeeva & M. V. Kacharava

Authors
  1. V. I. Kubrin
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  2. V. F. Korzo
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  3. E. G. Dorofeeva
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  4. M. V. Kacharava
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 56–60, November, 1983.

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Kubrin, V.I., Korzo, V.F., Dorofeeva, E.G. et al. Charge transfer and electric strength of thin silicon oxynitride films. Soviet Physics Journal 26, 1014–1017 (1983). https://doi.org/10.1007/BF00896663

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  • DOI: https://doi.org/10.1007/BF00896663

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