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Optical charge transfer for the dope in GaAs<Cr>

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

It is concluded that the chromium dope is amphoteric in behavior on the basis of the spectra, kinetics, and lux-ampere characteristics of the absorption and photoconductivity induced by 1.15-μm IR laser radiation in high-resistance specimens of GaAs〈Cr〉. It is assumed that the additional IR illumination produces optical charge transfer in the chromium in accordance with Cr3+3d3 + hν → Cr2+3d4 + Cr4+3d2. The photoneutralization of the Cr4+3d2 centers is responsible for additional optical-absorption and photoconductivity bands appearing in the long-wave region. The kinetic equations for these centers are solved, which describes the experimental results satisfactorily. It is suggested that chromium may compensate not only shallow donors in GaAs but also shallow acceptors.

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Authors and Affiliations

  1. Shevchenko University, Kiev

    O. V. Vakulenko, A. S. Skirda & V. A. Skryshevskii

Authors
  1. O. V. Vakulenko
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  2. A. S. Skirda
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  3. V. A. Skryshevskii
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 85–89, November, 1983.

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Vakulenko, O.V., Skirda, A.S. & Skryshevskii, V.A. Optical charge transfer for the dope in GaAs<Cr>. Soviet Physics Journal 26, 1039–1042 (1983). https://doi.org/10.1007/BF00896670

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  • DOI: https://doi.org/10.1007/BF00896670

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