Abstract
The paper is concerned with the investigation of conductivity, carrier density, and mobility in inversion channels of DMIS structures (the investigation of carrier mobility and density in inversion channels of these structures is carried out for the first time). Taking into consideration the complexity of the preparation of DMIS structures, MIS structures were also prepared and investigated as test specimens.
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M. D. Pocha and R. W. Dutton, IEEE J. Solid State Circuits,10, 322 (1975).
A. A. Guzev, G. L. Kuryshev, and S. P. Sinitsa, Fiz. Tekh. Poluprovodn.,4, 2043 (1970).
R. Crawford, Circuit Applications of MOS Transistors [Russian translation], Kiev (1970).
V. G. Litovchenko and A. L. Gorban', Principles of the Physics of Microelectronic Metal-Insulator-Semiconductor Circuits [in Russian], Naukova Dumka, Kiev (1978).
Sh. M. Gasanli, V. V. Golubev, and V. Ya. Kunin, Izv. Vyssh. Uchebn. Zaved., Fiz., No.12, 44 (1980).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 64–67, November, 1983.
The authors wish to express their gratitude to V. G. Sitnikov for the preparation of the specimens investigated.
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Gasanli, S.M. Conductivity and electron mobility in inversion channels of DMIS structures. Soviet Physics Journal 26, 1021–1024 (1983). https://doi.org/10.1007/BF00896665
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DOI: https://doi.org/10.1007/BF00896665