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Resonance charge relaxation in physical barrier layers

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

It is shown experimentally that the space charge domain (SCD) of a MIS structure can be described as a layer-macrorelaxer by applying the appropriate formula for the Schottky barrier. The maximal time of the transient tC (the saturation time tCH) of the change in MIS-structure capacitance upon imposition of a sufficiently large rectangular depleting voltage pulse is expressed by the formula mentioned. A new method is correspondingly proposed for determining the ionization energy of bulk centers responsible for this relaxation. A comparison with data in the literature is presented and the prospects for developing representations on resonance charge relaxation in barrier layers is indicated.

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Authors and Affiliations

  1. Ryazan Radio Engineering Institute, USSR

    P. T. Oreshkin, Yu. V. Garmash & A. I. Perelygin

Authors
  1. P. T. Oreshkin
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  2. Yu. V. Garmash
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  3. A. I. Perelygin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 67–72, November, 1983.

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Oreshkin, P.T., Garmash, Y.V. & Perelygin, A.I. Resonance charge relaxation in physical barrier layers. Soviet Physics Journal 26, 1024–1028 (1983). https://doi.org/10.1007/BF00896666

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  • DOI: https://doi.org/10.1007/BF00896666

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