Abstract
An investigation of the distribution of the electrolyte-semiconductor capacitance barrier over the thickness of epitaxial layers of gallium arsenide doped with iron on a low-resistance substrate is described. It is shown that measurements of the barrier capacitance at low frequencies enables the position of the π-ν-junction, formed at the boundary of separation of the epitaxial layer and the substrate, to be accurately determined.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 89–93, November, 1983.
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Chernov, N.A., Vilisova, M.D., Bakin, N.N. et al. Determination of the position of the Π-ν-junction in epitaxial structures of gallium arsenide doped with iron. Soviet Physics Journal 26, 1043–1046 (1983). https://doi.org/10.1007/BF00896671
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DOI: https://doi.org/10.1007/BF00896671