Abstract
The photocurrent spectra of layered GaSe〈Sn〉 single crystals are investigated at room temperature in the fundamental absorption edge region. Their peculiarities associated with the thickness of the specimens are examined for two configurations. In the first, light is incident in the direction of the crystallographic C axis on the surface containing the current contacts, while in the second, the light falls on the opposite surface, with no contacts on. Large photoconductivity anisotropy is only observed for photocarriers excited for hν < Eg. It is explained by the formation of excitons in this section of the spectrum. The thickness dependence of photocurrent maximum is determined in the second configuration.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 61–64, November, 1983.
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Katerinchuk, V.N., Kovalyuk, Z.D. Peculiarities of the photoconductivity of GaSe<Sn> single crystals in the fundamental absorption edge region. Soviet Physics Journal 26, 1018–1020 (1983). https://doi.org/10.1007/BF00896664
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DOI: https://doi.org/10.1007/BF00896664