1. Possibility of increasing the thermal stability of Si by doping with transition or rare-earth metals

   • V. M. Glazov
   • G. G. Timoshina
   • A. Ya. Potemkin

   Atomic Structure and Non-Electric Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 875 - 878

2. Optical spectroscopy of excitonic states in zinc diarsenide

   • A. V. Mudryi
   • V. M. Trukhan
   • S. F. Marenkin

   Atomic Structure and Non-Electric Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 879 - 881

3. The valence band structure in chalcopyrite Cu(In,Ga)Se₂ films

   • A. S. Kindyak
   • V. V. Kindyak
   • Yu. V. Rud’

   Atomic Structure and Non-Electric Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 882 - 885

4. Electronic structure of the Er-O₆ complex in silicon

   • N. P. Il’in
   • V. F. Masterov

   Atomic Structure and Non-Electric Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 886 - 892

5. Quenching of EL2 defect-induced luminescence in gallium arsenide by copper atoms

   • F. M. Vorobkalo
   • K. D. Glinchuk
   • A. V. Prokhorovich

   Electronic and Optical Properties Semiconductors Pages: 893 - 895

6. Investigation of the parameters of deep centers in n-6HSiC epitaxial layers obtained by gas-phase epitaxy

   • A. A. Lebedev
   • D. V. Davydov

   Electronic and Optical Properties Semiconductors Pages: 896 - 898

7. Anomalous magnetic properties of the solid solutions (InSb)_1−x (CdTe)_x at low temperatures

   • A. V. Brodovoi
   • V. A. Brodovoi
   • S. P. Kolesnik

   Electronic and Optical Properties Semiconductors Pages: 899 - 900

8. Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells

   • K. G. Zolina
   • V. E. Kudryashov
   • A. É. Yunovich

   Electronic and Optical Properties Semiconductors Pages: 901 - 907

9. Polarization photoluminescence study of the complex V_GaTe_As in n-type GaAs in the temperature range 77–230 K

   • A. A. Gutkin
   • M. A. Reshchikov
   • V. E. Sedov

   Electronic and Optical Properties Semiconductors Pages: 908 - 915

10. The problem of intermediate temperatures or electric fields in the scattering of hot electrons by acoustic phonons

    • Z. S. Kachlishvili
    • L. G. Kukutariya

    Electronic and Optical Properties Semiconductors Pages: 916 - 917

11. Mechanisms of current flow in zinc telluride-zinc selenide heterojunctions

    • V. E. Baranyuk
    • V. P. Makhnii

    Semiconductor Structures, Interfaces, and Surface Pages: 918 - 920

12. Resonant interaction of electrons with an rf electric field in asymmetric double-barrier structures

    • E. I. Golant
    • A. B. Pashkovskii

    Semiconductor Structures, Interfaces, and Surface Pages: 921 - 925

13. Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC

    • A. A. Lebedev
    • N. S. Savkina
    • M. P. Shcheglov

    Semiconductor Structures, Interfaces, and Surface Pages: 926 - 928

14. Radiative recombination rate in quantum-well structures in the model without k-selection

    • A. A. Afonenko
    • I. S. Manak
    • V. K. Kononenko

    Semiconductor Structures, Interfaces, and Surface Pages: 929 - 932

15. Contact-free determination of the parameters of a 2D electron gas in GaAs/AlGaAs heterostructures

    • I. L. Drichko
    • I. Yu. Smirnov

    Low-Dimensional Systems Pages: 933 - 935

16. Binding energy of Coulomb acceptors in quantum-well systems

    • V. I. Belyavskii
    • M. V. Gol’dfarb
    • Yu. V. Kopaev

    Low-Dimensional Systems Pages: 936 - 940

17. Photoelectric properties of GaAs/InAs heterostructures with quantum dots

    • B. N. Zvonkov
    • I. G. Malkina
    • D. O. Filatov

    Low-Dimensional Systems Pages: 941 - 946

18. Quantum-dot lasers: Principal components of the threshold current density

    • S. V. Zaitsev
    • N. Yu. Gordeev
    • D. Bimberg

    Low-Dimensional Systems Pages: 947 - 949

19. The effect of a “Coulomb well” on the absorption and magnetoabsorption spectra of strained InGaAs/GaAs heterostructures

    • A. V. Kavokin
    • S. I. Kokhanovskii
    • S. V. Gupalov

    Low-Dimensional Systems Pages: 950 - 960

20. The effect of a longitudinal magnetic field on electronic intersubband transitions in asymmetric heterostructures

    • F. T. Vas’ko
    • G. Ya. Kis

    Low-Dimensional Systems Pages: 961 - 965

21. Radiation hardness of porous silicon

    • V. V. Ushakov
    • V. A. Dravin
    • V. Yu. Timoshenko

    Amorphous, Glassy, and Porous Semiconductors Pages: 966 - 969

22. Study of porous silicon obtained by krypton ion implantation and laser annealing

    • M. F. Galyautdinov
    • N. V. Kurbatova
    • A. A. Bukharaev

    Amorphous, Glassy, and Porous Semiconductors Pages: 970 - 973

23. Photoluminescence and photoexcitation spectra of porous silicon subjected to anodic oxidation and etching

    • V. V. Filippov
    • P. P. Pershukevich
    • V. P. Bondarenko

    Amorphous, Glassy, and Porous Semiconductors Pages: 974 - 979

24. Comparison of equilibrium and nonequilibrium charge carrier mobilities in polycrystalline synthetic diamond and amorphous diamond-like carbon films

    • Yu. V. Pleskov
    • A. R. Tameev
    • A. M. Baranov

    Amorphous, Glassy, and Porous Semiconductors Pages: 980 - 982

25. Recombination in the space charge region and its effect on the transmittance of bipolar transistors

    • S. V. Bulyarskii
    • N. S. Grushko
    • A. V. Lakalin

    The Physics of Semiconductor Devices (Photodiodes, Lasers, etc.) Pages: 983 - 987