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Radiation hardness of porous silicon

  • Amorphous, Glassy, and Porous Semiconductors
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Abstract

The effect of irradiation by 300-keV Ar+ ions on the properties of electrochemically produced porous silicon is studied at doses of 5×1014–1×1016 cm−2. Raman scattering and photoluminescence data are used to show that the radiation hardness of porous silicon layers is substantially greater than that of single crystal silicon.

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Authors and Affiliations

  1. P. N. Lebedev Physics Institute, Russian Academy of Sciences, 117924, Moscow, Russia

    V. V. Ushakov, V. A. Dravin & N. N. Mel’nik

  2. Institute of General Physics, Russian Academy of Sciences, 11794, Moscow, Russia

    V. A. Karavanskii

  3. Physics Faculty, M. V. Lomonosov Moscow State University, 119899, Moscow, Russia

    E. A. Konstantinova & V. Yu. Timoshenko

Authors
  1. V. V. Ushakov
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  2. V. A. Dravin
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  3. N. N. Mel’nik
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  4. V. A. Karavanskii
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  5. E. A. Konstantinova
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  6. V. Yu. Timoshenko
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Additional information

Fiz. Tekh. Poluprovodn. 31, 1126–1129 (September 1997)

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Ushakov, V.V., Dravin, V.A., Mel’nik, N.N. et al. Radiation hardness of porous silicon. Semiconductors 31, 966–969 (1997). https://doi.org/10.1134/1.1187143

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  • DOI: https://doi.org/10.1134/1.1187143

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