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Photoluminescence and photoexcitation spectra of porous silicon subjected to anodic oxidation and etching

  • Amorphous, Glassy, and Porous Semiconductors
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Abstract

The photoluminescence and photoexcitation spectra of porous silicon films with an initial porosity of 50–60%, produced on single crystals of p-type silicon and subjected to anodic oxidation and chemical etching, are studied. The existence of an amorphous phase in the etched porous silicon is found not to affect the photoluminescence spectrum of porous silicon. Features of the photoexcitation spectra before and after etching, as well as the evolution of the photoluminescence and photoexcitation spectra after etching, can be interpreted in terms of a uniform quantization model that includes elastic stresses in the silicon crystals of the porous silicon.

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References

  1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

    Article  ADS  Google Scholar 

  2. R. Kumar, Y. Kitochi, and K. Hara, Appl. Phys. Lett. 63, 3032 (1993).

    ADS  Google Scholar 

  3. J. M. Lavine, S. Sawan, Y. T. Shieh, and A. J. Balezza, Appl. Phys. Lett. 62, 1099 (1993).

    Article  ADS  Google Scholar 

  4. K. H. Jung, S. Shin, D. L. Kwong, C. C. Cho, and B. E. Gnade, Appl. Phys. Lett. 61, 2467 (1992).

    Article  ADS  Google Scholar 

  5. S. M. Prokes, W. E. Carlos, and P. M. Burmudez, Appl. Phys. Lett. 61, 1447 (1992).

    Article  ADS  Google Scholar 

  6. Y. M. Weng, Z. M. Fan, and X. F. Zong, Appl. Phys. Lett. 63, 168 (1993).

    Article  ADS  Google Scholar 

  7. S. Shih, K. H. Jung, D. L. Kwong, M. Kovar, and J. M. White, Appl. Phys. Lett. 62, 1904 (1993).

    ADS  Google Scholar 

  8. J. Vial, F. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. Macfarlane, Phys. Rev. B 45, 14171 (1992).

    Google Scholar 

  9. M. B. Robinson, A. C. Dilon, and S. M. George, Appl. Phys. Lett. 62, 1493 (1993).

    Article  ADS  Google Scholar 

  10. V. V. Filippov, P. P. Pershukevich, V. P. Bondarenko, and A. M. Dorofeev, Phys. Status Solidi B 184, 573 (1994).

    Google Scholar 

  11. Y. G. Chabal, G. S. Higashi, N. Raghavachari, and V. A. Burroughs, J. Vac. Sci. Technol. A 7, 2104 (1989).

    Article  ADS  Google Scholar 

  12. W. B. Pollard and G. Lucowski, Phys. Rev. B 26, 3172 (1982).

    Article  ADS  Google Scholar 

  13. M. H. Bordski, M. Cardona, and J. J. Cuomo, Phys. Rev. B 26, 3356 (1977).

    Google Scholar 

  14. Y. Ogata, H. Niki, T. Sakka, and M. Iwasaki, J. Electrochem. Soc. 42, 195 (1995).

    Google Scholar 

  15. M. S. Brandt, H. D. Fuchs, M. Stutzmann, J. Weber, and M. Cardona, Solid State Commun. 81, 307 (1992).

    Article  Google Scholar 

  16. A. Nakajima, T. Itakura, S. Watanabe, and N. Nakayama, Appl. Phys. Lett. 61, 46 (1992).

    ADS  Google Scholar 

  17. T. Motohiro, T. Kachi, F. Miura, Y. Takeda, S. Hyodo, and S. Noda, Japan. J. Appl. Phys. 31, L207 (1992).

    Article  Google Scholar 

  18. N. Ookubo, J. Appl. Phys. 74, 6375 (1993).

    Article  ADS  Google Scholar 

  19. Y. H. Xie, W. L. Wilson, F. M. Ross, J. A. Mucha, and E. A. Fitzgerald, J. Appl. Phys. 71, 2403 (1992).

    ADS  Google Scholar 

  20. J. Shah, A. Pinczuk, F. B. Alexander, and B. G. Bagley, Solid State Commun. 42, 717 (1982).

    Article  Google Scholar 

  21. D. E. Aspnes, and A. A. Studnia, Phys. Rev. B 27, 985 (1983).

    Article  ADS  Google Scholar 

  22. N. Koshida, H. Koyama, Y. Yamamoto, and G. J. Collins, Appl. Phys. Lett. 63, 2655 (1993).

    ADS  Google Scholar 

  23. G. D. Sanders and Y. C. Chang, Phys. Rev. B 45, 9202 (1992).

    Article  ADS  Google Scholar 

  24. F. Buda, J. Kohanoff, and M. Parrinello, Phys. Rev. Lett. 69, 1272 (1992).

    Article  ADS  Google Scholar 

  25. L. P. Avakyants, V. M. Avdokhina, and G. B. Demidovich et al., Poverkhnost’ 5, 95 (1989).

  26. A. N. Starukhin, A. A. Lebedev, B. S. Razbirin, and L. M. Kapitonova, Pis’ma Zh. Tekh. Fiz. 18, 80 (1992) [Tech. Phys. Lett. 18, 160 (1992)].

    Google Scholar 

  27. G. Renand, P. Fuoss, A. Ourmazd, J. Bevk, B. Freer, and P. Hahn, Appl. Phys. Lett. 58, 1272 (1991).

    Google Scholar 

  28. T. Konishi, K. Uesugi, K. Takoka, S. Kawano, M. Yoshimuta, and T. Yao, Japan. J. Appl. Phys. 32, 3131 (1993).

    Article  ADS  Google Scholar 

  29. N. Noduchi, I. Suemune, and M. Yamanishi, Japan. J. Appl. Phys. 31, L490 (1992).

    ADS  Google Scholar 

  30. F. Koch, Microelectronic Engineering 28, 237 (1995).

    Article  Google Scholar 

  31. T. George, M. S. Anderson, W. T. Pike, T. L. Lin, R. W. Fathaner, K. Jung, and D. L. Kwong, Appl. Phys. Lett. 60, 2354 (1992).

    Article  Google Scholar 

  32. J. P. Perez, J. V. Malobes, P. McNeill, J. Prosad, R. Cheek, J. Kelber, J. P. Estrera, P. D. Stevens, and R. Glosser, Appl. Phys. Lett. 61, 563 (1992).

    Article  ADS  Google Scholar 

  33. D. T. Pierce and W. E. Spicer, Phys. Rev. B 5, 3017 (1972).

    ADS  Google Scholar 

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Authors and Affiliations

  1. Institute of Physics, Academy of Sciences of Belarus, 220072, Minsk, Belarus

    V. V. Filippov & P. P. Pershukevich

  2. Belarus State University of Information Technology and Electronics, 220027, Minsk, Belarus

    V. P. Bondarenko

Authors
  1. V. V. Filippov
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  2. P. P. Pershukevich
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  3. V. P. Bondarenko
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Additional information

Fiz. Tekh. Poluprovodn. 31, 1135–1141 (September 1997)

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Filippov, V.V., Pershukevich, P.P. & Bondarenko, V.P. Photoluminescence and photoexcitation spectra of porous silicon subjected to anodic oxidation and etching. Semiconductors 31, 974–979 (1997). https://doi.org/10.1134/1.1187145

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  • DOI: https://doi.org/10.1134/1.1187145

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