Abstract
Injection heterolasers based on quantum dots grown by molecular-beam epitaxy have been investigated. It is shown that the room-temperature threshold current density can be lowered to 15 A/cm2 by decreasing the nonradiative recombination and increasing the degree of carrier localization. The density of states in structures with vertically coupled quantum dots was investigated by the electroabsorption method.
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Fiz. Tekh. Poluprovodn. 31, 1106–1108 (September 1997)
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Zaitsev, S.V., Gordeev, N.Y., Kopchatov, V.I. et al. Quantum-dot lasers: Principal components of the threshold current density. Semiconductors 31, 947–949 (1997). https://doi.org/10.1134/1.1187140
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DOI: https://doi.org/10.1134/1.1187140