Abstract
The optical and magnetooptical properties of strained InGaAs/GaAs quantum-well heterostructures grown by molecular-beam epitaxy were studied at T=1.7 K in magnetic fields B⩽7.5 T. The well-resolved oscillatory structure of the magnetoabsorption spectra makes it possible to reproduce the “fan diagrams” for transitions between Landau levels of the HH1E1 quantum-confined states, taking into account exciton binding energies calculated variationally. Based on these results, reduced cyclotron masses of carriers were calculated for quantum wells with various indium contents. A self-consistent variational solution to the exciton problem in the structure under study shows that for weak type-II potentials the effect of Coulomb localization of the hole leads to a relative increase in the oscillator strength of the LH1E1 exciton transition. In this case the LH1E1 and LH3E1 exciton transitions remain spatially direct and retain a considerable intensity. The calculated splitting of ∼9 meV between these two states in zero magnetic field is found to be in agreement with experiment. The significant oscillator strength of light-hole excitons, along with the observed doublet structure, are experimental confirmations that electron-hole attraction can transform a rather low barrier for light holes in a type-II structure into a quantum well with a parabolic “Coulomb” shape near its bottom, i.e., a “Coulomb well.”
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Fiz. Tekh. Poluprovodn. 31, 1109–1120 (September 1997)
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Kavokin, A.V., Kokhanovskii, S.I., Nesvizhkii, A.I. et al. The effect of a “Coulomb well” on the absorption and magnetoabsorption spectra of strained InGaAs/GaAs heterostructures. Semiconductors 31, 950–960 (1997). https://doi.org/10.1134/1.1187141
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DOI: https://doi.org/10.1134/1.1187141