Abstract
The polarization of the photoluminescence band with a maximum near 1.18 eV, which is formed as a result of the resonance excitation of V GaTeAs complexes by polarized light, is investigated for GaAs:Te with various electron densities in the temperature range 77–230 K. Based on a previously developed model of these defects, theoretical equations for the polarization of their luminescence are derived in the one-dipole approximation, taking into account the possible reorientation of Jahn-Teller distortions of the complexes. It is shown that the temperature dependence of the polarization of the investigated band is well described by these equations, and the parameters characterizing the optical dipoles of the complexes are estimated. A decrease in the degree of polarization at temperatures above ∼ 120 K is explained by the transfer of excitation to complexes with any possible orientations of the initial axis and by Jahn-Teller distortion (owing to thermal-field emission and retrapping of holes by the photoexcited complexes). The decrease in polarization can also be partially linked to the reorientation of distortions during the lifetime of the emitting state of the complex. The height of the energy barrier for such reorientation is at least ∼200 meV.
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Fiz. Tekh. Poluprovodn. 31, 1062–1070 (September 1997)
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Gutkin, A.A., Reshchikov, M.A. & Sedov, V.E. Polarization photoluminescence study of the complex VGaTeAs in n-type GaAs in the temperature range 77–230 K. Semiconductors 31, 908–915 (1997). https://doi.org/10.1134/1.1187267
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DOI: https://doi.org/10.1134/1.1187267