Abstract
It is pointed out that the degradation of Si single crystals after heating is due primarily to structural transformations associated with a partial transformation of diamond-like Si into silicon with the structure of white tin. These transformations, which are observed at high pressures, occur as a result of the appearance of numerous zones of stress concentration due to the anisotropy of thermal expansion of differently oriented microvolumes of the crystal. The high pressures required for the indicated phase transition to occur can be reached in these zones. It is pointed out that the structural transformations leading to the degradation of the electrical properties of Si can be prevented by doping it with transition or rare-earth metals, which increase the interatomic interaction energy and, as a result, decrease the thermal expansion. The choice of dopant is made on the basis of calculations of the binding energy and charge density based on a system of unpolarized ionic radii.
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Fiz. Tekh. Poluprovodn. 31, 1025–1028 (September 1997)
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Glazov, V.M., Timoshina, G.G., Mikhailova, M.S. et al. Possibility of increasing the thermal stability of Si by doping with transition or rare-earth metals. Semiconductors 31, 875–878 (1997). https://doi.org/10.1134/1.1187158
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DOI: https://doi.org/10.1134/1.1187158