Abstract
The binding energy of a Coulomb acceptor state in a type-I heterostructure with several tunneling-coupled quantum wells is investigated as a function of the positions of the impurity in the structure. It is shown that the specific features of quantum-well hole states strongly influence the binding energy, especially when subbands with negative effective masses arise.
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Fiz. Tekh. Poluprovodn. 31, 1095–1099 (September 1997)
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Belyavskii, V.I., Gol’dfarb, M.V. & Kopaev, Y.V. Binding energy of Coulomb acceptors in quantum-well systems. Semiconductors 31, 936–940 (1997). https://doi.org/10.1134/1.1187138
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DOI: https://doi.org/10.1134/1.1187138