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The valence band structure in chalcopyrite Cu(In,Ga)Se2 films

  • Atomic Structure and Non-Electric Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.)
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Abstract

The structure of the valence band at the Γ point of the Brillouin zone of Cu(In,Ga)Se2 films is investigated on the basis of interference spectrophotometry data and an analysis of the structure of edge absorption within the framework of the quasicubic model of valence-band p-d hybridization in chalcopyrite compounds. The fundamental parameters of the quasicubic model associated with splitting of the valence band under the action of the tetragonal lattice field (Δcf), the spin-orbit interaction (Δso), and the degree of adulteration (hybridization) of the upper p-levels of the chalcogen by copper d states in Cu(In,Ga)Se2 chalcopyrite films are determined. The dependence of the direct allowed transitions E A , E B , E C on the composition of CuInxGa1−x Se2 solid solutions (for 0⩽x⩽1) is established.

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Authors and Affiliations

  1. Institute of Physics of Solid State and Semiconductors, Belorussian Academy of Sciences, 220072, Minsk, Belarus

    A. S. Kindyak & V. V. Kindyak

  2. A.F. Ioffe Physico-technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    Yu. V. Rud’

Authors
  1. A. S. Kindyak
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  2. V. V. Kindyak
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  3. Yu. V. Rud’
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Fiz. Tekh. Poluprovodn. 31, 1033–1036 (September 1997)

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Kindyak, A.S., Kindyak, V.V. & Rud’, Y.V. The valence band structure in chalcopyrite Cu(In,Ga)Se2 films. Semiconductors 31, 882–885 (1997). https://doi.org/10.1134/1.1187269

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