Abstract
AbstractThe effect of recombination in the space charge region of the emitter junction on the transmittance of bipolar transistors is considered. Measurements of the transmittance of several commercial transistors at low injection levels essentially agree with theoretical values given by the expressions obtained here, which take into account deep levels and recombination through them.
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References
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Fiz. Tekh. Poluprovodn. 31, 1146–1150 (September 1997)
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Bulyarskii, S.V., Grushko, N.S., Somov, A.I. et al. Recombination in the space charge region and its effect on the transmittance of bipolar transistors. Semiconductors 31, 983–987 (1997). https://doi.org/10.1134/1.1187157
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DOI: https://doi.org/10.1134/1.1187157