Abstract
It is shown that the introduction of copper atoms into gallium arsenide crystals containing EL2 antisite defects results in virtually complete vanishing of the EL2-induced luminescence bands with radiation maxima at hv m =0.63 and 0.68 eV. This occurs as a result of the deactivation of the EL2 defects as a result of their interaction with copper atoms, which account for the formation of electrically inactive EL2-Cu complexes.
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Fiz. Tekh. Poluprovodn. 31, 1045–1048 (September 1997)
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Vorobkalo, F.M., Glinchuk, K.D. & Prokhorovich, A.V. Quenching of EL2 defect-induced luminescence in gallium arsenide by copper atoms. Semiconductors 31, 893–895 (1997). https://doi.org/10.1134/1.1187149
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DOI: https://doi.org/10.1134/1.1187149