Numerical simulation of hydrogenation of GaAs at the cooling stage V. A. KagadeiE. V. Nefyodtsev Atomic Structure and Nonelectronic Propertties of Semiconductors 24 April 2010 Pages: 413 - 420
Influence of the defect structure of γ-La2(1 − x)Nd2x S3 crystals on their spectroscopic properties A. A. Mamedov Electrical and Optical Properties of Semiconductors 24 April 2010 Pages: 421 - 425
The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals M. M. MezdroginaE. Yu. DanilevskiiM. V. Eremenko Electrical and Optical Properties of Semiconductors 24 April 2010 Pages: 426 - 431
1.5–1.6 μm photoluminescence of silicon layers with a high density of lattice defects A. A. ShklyaevA. V. LatyshevM. Ichikawa Electrical and Optical Properties of Semiconductors 24 April 2010 Pages: 432 - 437
Features of self-activated luminescence spectra of CdS:O in the context of band anticrossing theory N. K. MorozovaN. D. Danilevich Electrical and Optical Properties of Semiconductors 24 April 2010 Pages: 438 - 443
Optical absorption and diffusion of iron in ZnSe single crystals Yu. F. VaksmanYu. A. NitsukP. V. Shapkin Electrical and Optical Properties of Semiconductors 24 April 2010 Pages: 444 - 447
Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons A. E. BelyaevN. S. BoltovetsV. N. Sheremet Semiconductor Structures, Interfaces, and Surfaces 24 April 2010 Pages: 448 - 456
Stimulated radiation at a wavelength of 2.5 μm at room temperature from optically excited Cd x Hg1 − x Te-based structures A. A. AndronovYu. N. NozdrinG. Yu. Sidorov Semiconductor Structures, Interfaces, and Surfaces 24 April 2010 Pages: 457 - 462
Current flow mechanism in ohmic contact to n-4H-SiC T. V. BlankYu. A. GoldbergF. Yu. Soldatenkov Semiconductor Structures, Interfaces, and Surfaces 24 April 2010 Pages: 463 - 466
Specific features of erbium ion photoluminescence in structures with amorphous and crystalline silicon nanoclusters in silica matrix S. A. DyakovD. M. ZhigunovV. Yu. Timoshenko Low-Dimensional Systems 24 April 2010 Pages: 467 - 471
Mixed conduction in doped semiconductor structures related to quasi-metallic conduction in the impurity band N. V. AgrinskayaV. I. KozubD. S. Poloskin Low-Dimensional Systems 24 April 2010 Pages: 472 - 477
The sharply nonlinear current-voltage characteristic of a structure with a quantum well built in the depletion region of a Schottky Barrier A. M. KorolI. V. Nosenko Low-Dimensional Systems 24 April 2010 Pages: 478 - 481
Ordered arrays of Si nanocrystals in SiO2: Structural, optical, and electronic properties I. V. AntonovaV. A. SkuratovI. Balberg Low-Dimensional Systems 24 April 2010 Pages: 482 - 487
Exciton binding energy in semiconductor quantum dots S. I. Pokutnii Low-Dimensional Systems 24 April 2010 Pages: 488 - 493
Photoconductivity of two-phase hydrogenated silicon films A. G. KazanskiiE. I. TerukovJ. P. Kleider Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 24 April 2010 Pages: 494 - 497
Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn N. T. GurinO. Yu. SabitovA. M. Afanas’ev Physics of Semiconductor Devices 24 April 2010 Pages: 498 - 507
Physical model of MOS structure aging M. A. BulushevaV. D. PopovA. V. Skorodumova Physics of Semiconductor Devices 24 April 2010 Pages: 508 - 513
Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures B. N. RomanyukV. P. MelnikA. S. Oberemok Fabrication, Treatment, and Testing of Materials and Structures 24 April 2010 Pages: 514 - 518
Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers Yu. N. DrozdovA. V. NovikovD. V. Yurasov Fabrication, Treatment, and Testing of Materials and Structures 24 April 2010 Pages: 519 - 524
Light-emitting Si nanostructures formed in SiO2 on irradiation with swift heavy ions G. A. KachurinS. G. CherkovaA. G. Cherkov Fabrication, Treatment, and Testing of Materials and Structures 24 April 2010 Pages: 525 - 530
X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2 and Si sources S. N. ShaminV. R. GalakhovI. Balberg Fabrication, Treatment, and Testing of Materials and Structures 24 April 2010 Pages: 531 - 536
Influence of the energy parameters of the deposited laser-induced flow of platinum atoms on characteristics of a Pt/n-6H-SiC thin-film structure V. Yu. FominskiiR. I. RomanovM. V. Demin Fabrication, Treatment, and Testing of Materials and Structures 24 April 2010 Pages: 537 - 543
Deposition of thin Bi2Te3 and Sb2Te3 films by pulsed laser ablation I. S. VirtT. P. ShkumbatyukA. G. Phedorov Fabrication, Treatment, and Testing of Materials and Structures 24 April 2010 Pages: 544 - 549