Abstract
A physical model of MOS structure aging is presented. The energy parameter of a strained MOS structure, i.e., the energy level of strained bonds, was found using the results of accelerated testing.
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V. D. Popov and N. M. Roizin, Mikroelektronika 1, 552 (1973).
J. R. Schwank, D. M. Fleetwood, P. S. Winokur, P. V. Dressendorfer, D. C. Turpin, and D. T. Sanders, IEEE Trans. Nucl. Sci. NS-34, 1152 (1987).
V. S. Pershenkov, V. D. Popov, and A. V. Shal’nov, Surface Radiation Effects in Integrated Microcircuits (Énergoatomizdat, Moscow, 1988) [in Russian].
V. I. Énns and Yu. M. Kobzev, Design of Analog KMDP-Microcircuits, Short Manual of Designer (Goryachaya Liniya-Telekom, Moscow, 2005) [in Russian].
D. A. Baryshnikov, G. A. Zhukova, and V. N. Mordkovich, Élektron. Tekhn. Ser. Poluprovodn. Prib., No. 5 (148), 19 (1981).
V. L. Bonch-Bruevich and S. G. Kalashnikov, Semiconductor Physics (Nauka, Moscow, 1967) [in Russian].
S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Moscow, Mir, 1984).
W. Harrison, Eletronic Structure and the Properties of Solids (Freeman, New York, 1980; Mir, Moscow, 1983), vol. 1.
V. A. Bolisov, L. N. Patrikeev, and V. D. Popov, Mikroelektronika 12, 477 (1983).
B. M. Yavorskii and A. A. Detlaf, Handbook on Physics (Nauka, Moscow, 1977), p. 269 [in Russian].
P. J. McWhorter and P. S. Winokur, Appl. Phys. Lett. 48, 133 (1986).
M. M. Malyshev, V. D. Popov, V. N. Surin, and D. V. Shubin, Vopr. At. Nauki Tekhn. Ser. Fiz. Rad. Vozd. Eadioelectron. Appar. (Moscow, FGUP TsNIIatominform, 2007), Nos. 3–4, 33 (2007).
L. N. Patrikeev, B. I. Podlepetskii, and V. D. Popov, Radiation Stability of Semiconductor Devices and Integrated Circuits (Mosc. Inzh. Fiz. Inst., Moscow, 1975) [in Russian].
E. H. Snow, A. S. Grove, and D. F. Fitzgerald, Proc. IEEE 55, 1168 (1967).
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Original Russian Text © M.A. Bulusheva, V.D. Popov, G.A. Protopopov, A.V. Skorodumova, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 4, pp. 527–532.
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Bulusheva, M.A., Popov, V.D., Protopopov, G.A. et al. Physical model of MOS structure aging. Semiconductors 44, 508–513 (2010). https://doi.org/10.1134/S1063782610040172
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DOI: https://doi.org/10.1134/S1063782610040172