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Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The effect of ionizing radiation of 60Co γ-ray photons in the dose range 104–2 × 109 rad on metal-semiconductor Au-ZrB x -AlGaN/GaN and Au-TiB x -Al-Ti-n-GaN contacts and Au-ZrB x -n-GaN Schottky diodes is examined. The contacts with the TiB x and ZrB x diffusion barriers do not degrade under the effect of ionizing radiation if the dose does not exceed 108 rad. The Au-ZrB x -n-GaN Schottky diodes remain stable in the dose range 104–106 rad. As the radiation dose is increased to ≳108 rad, the damage to the contact metallization increases and is accompanied by formation of through pores, which is conducive to accumulation of oxygen at the Au-ZrB x (TiB x ) interfaces and to an increase in mass transport of atoms in contact-forming layers. In this case, irradiation-caused degradation of the Schottky diodes is observed. Possible mechanisms of radiation damage of contact structures with diffusion barriers are analyzed.

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References

  1. I. Shalich and Y. Shapira, J. Vac. Sci. Technol. B 18, 2477 (2000).

    Article  Google Scholar 

  2. L. Woss, R. Khanna, S. J. Pearton, F. Ren, and I. I. Kravchenko, Appl. Surf. Sci. 253, 1255 (2006).

    Article  ADS  Google Scholar 

  3. O. A. Ageev, A. E. Belyaev, N. S. Boltovets, R. V. Konakova, V. V. Milenin, and V. A. Pilipenko Interstitial Phases in Technology of Semiconductor Devices and VLSI Technology (Inst. Monokristallov, Khar’kov, 2008) [in Russian].

    Google Scholar 

  4. M. S. Koval’chenko, V. V. Ogorodnikov, Yu. N. Rogovoi, and A. G. Krainii, Radiation Damage to Refractory Compounds (Atomizdat, Moscow, 1979) [in Russian].

    Google Scholar 

  5. L. S. Palatnik, P. G. Cheremskoi, and M. Ya. Fuks, Pores in Films (Énergoizdat, Moscow, 1982) [in Russian].

    Google Scholar 

  6. O. V. Sobol’, Equipment and Technology of Thermal Processing of Metals and Alloys (Khar’kov, NNTs KhFTI, Kontrast, 2004), ch. II [in Russian].

    Google Scholar 

  7. B. Kelly, Irradiation Damage to Solids (Pergamon, Oxford, 1966; Atomizdat, Moscow, 1970).

    Google Scholar 

  8. M. A. Nickolet, Microelectron. Engin. 55, 357 (2001).

    Article  Google Scholar 

  9. R. A. Andrievskii, Usp. Khim. 74, 1163 (2005).

    Google Scholar 

  10. A. P. Shpak, P. G. Cheremskoi, Yu. A. Kunitskii, and O. V. Sobol’, Cluster and Nanostructure Materials (Akademperiodika, Kiev, 2005), vol. 3 [in Russian].

    Google Scholar 

  11. T. Bechshtedt and R. Enderlein, Semiconductor Surfaces and Interfaces. Their Atomic and Electronic Structures (Akademie, Berlin, 1988; Mir, Moscow, 1990).

    Google Scholar 

  12. A. P. Mamontov and I. P. Chernov, Effect of Low Doses of Ionizing Radiation (Énergoatomizdat, Moscow, 2001) [in Russian].

    Google Scholar 

  13. O. Yu. Borkovskaya, N. L. Dmitruk, R. V. Konakova, V. G. Litovchenko, Yu. A. Tkhorik, and V. I. Shakhovtsov, Preprint No. 6 (IF AN USSR, Kiev, 1986).

  14. A. E. Belyaev, J. Breza, E. F. Venger, M. Vesely, I. Yu. Il’in, R. V. Konakova, J. Liday, V. G. Lyapin, V. V. Milenin, I. V. Prokopenko, and Yu. A. Tkhorik, Radiation Resistance of GaAs-based Microwave Schottky-barrier Devices (Interpres, Kiev, 1998), p. 127 [in Russian].

    Google Scholar 

  15. G. E. Chaika, I. K. Sinishchuk, and F. K. Shishiyanu, Fiz. Tekh. Poluprovodn. 19, 674 (1985) [Sov. Phys. Semicond. 19, 415 (1985)].

    Google Scholar 

  16. T. D. Dzhafarov, Radiation-Stimulated Diffusion in Semiconductors (Énergoatomizdat, Moscow, 1991) [in Russian].

    Google Scholar 

  17. V. F. Kiselev and O. V. Krylov, Adsorption Processes on Surface of Semiconductors and Insulators (Nauka, Moscow, 1978) [in Russian].

    Google Scholar 

  18. I. N. Frantsevich, R. F. Voitovich, and V. A. Lavrenko, High Temperature Oxydizing of Metals and Alloys (Izd-vo tekhn. lit. USSR, Kiev, 1963) [in Russian].

    Google Scholar 

  19. T. I. Serebryakova, V. A. Neronov, and P. D. Peshev, High Temperature Borides (Metallurgiya, Chelyab. otd-nie, Moscow, 1991) [in Russian].

    Google Scholar 

  20. A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, O. S. Lytvyn, V. V. Milenin, V. N. Sheremet, and Yu. N. Sveshnikov, SPQEO 10(4), 1 (2007).

    Google Scholar 

  21. B. Luo, J. W. Jonson, F. Ren, K. K. Allums, C. R. Abernathy, J. Pearton, A. M. Dabiran, A. M. Wowchak, J. Polley, P. P. Chow, D. Shoenfild, and A. G. Baka, Appl. Phys. Lett. 80, 604 (2002).

    Article  ADS  Google Scholar 

  22. O. Aktas, A. Kuliev, V. Kumar, R. Shwindt, S. Toshkov, D. Costech, J. Stubbins, and I. Adesida, Solid State Electron. 48, 471 (2004).

    Article  ADS  Google Scholar 

  23. G. A. Umana-Membreno, J. M. Dell, T. P. Hassler, B. D. Nener, G. Parish, L. Faraone, and U. K. Mashra, Appl. Phys. Lett. 80, 4354 (2002).

    Article  ADS  Google Scholar 

  24. N. M. Shmidt, D. V. Davydov, V. V. Emtsev, I. L. Krestnikov, A. A. Lebedev, W. M. Lundin, D. S. Poloskin, A. V. Sakharov, A. S. Usikov, and A. V. Osinsky, Phys. Stat. Solidi B 216, 533 (1999).

    Article  ADS  Google Scholar 

  25. Z.-Q. Fang, J. W. Hemsky, D. C. Look, and M. P. Mack, Appl. Phys. Lett. 72, 448 (1998).

    Article  ADS  Google Scholar 

  26. V. I. Strikha, Physical Basics of a Metal-Semiconductor Contact (Nauk. Dumka, Kiev, 1985) [in Russian].

    Google Scholar 

  27. J. W. Hsu, M. J. Manfra, D. V. Lang, S. Richter, S.N.G. Chu, A. M. Sergent, R. N. Kleiman, L. N. Pfeiffer, and R. J. Molnar, Appl. Phys. Lett. 78, 1685 (2001).

    Article  ADS  Google Scholar 

  28. J. R. Hayes, D.-W. Kim, H. Meidia, and S. Mahajan, Acta Mater. 51, 653 (2003).

    Article  Google Scholar 

  29. R. Khanna, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, and G. C. Chi, Appl. Phys. Lett. 87, 052110 (2005).

    Article  ADS  Google Scholar 

  30. S. A. Vitusevich, N. Klein, A. E. Belyaev, S. V. Danylyk, M. V. Petrychuk, R. V. Konakova, A. M. Kurakin, A. E. Rengevich, A. Yu. Avksentiev, B. A. Danylchenko, V. Tilak, J. Smart, A. Vertiatchikh, and L. F. Eastman, Mater. Res. Soc. Symp. Proc. 719, 133 (2002).

    Google Scholar 

  31. S. A. Vitusevich, N. Klein, A. E. Belyaev, S. V. Danylyk, M. V. Petrychuk, R. V. Konakova, A. M. Kurakin, A. E. Rengevich, A. Yu. Avksentiev, B. A. Danylchenko, V. Tilak, J. Smart, A. Vertiatchikh, and L. F. Eastman, Phys. Stat. Solidi A 195, 101 (2003).

    Article  ADS  Google Scholar 

  32. S. A. Vitusevich, N. Klein, A. E. Belyaev, S. V. Danylyk, M. V. Petrychuk, R. V. Konakova, A. M. Kurakin, P. M. Lytvyn, A. Yu. Avksentiev, B. A. Danylchenko, V. Tilak, J. Smart, A. Vertiatchikh, and L. F. Eastman, Mater. Res. Soc. Symp. Proc. 764, 183 (2003).

    Google Scholar 

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Authors and Affiliations

  1. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine

    A. E. Belyaev, R. V. Konakova, V. V. Milenin & V. N. Sheremet

  2. Orion State Enterprise Research Institute, 03057, Kyiv, Ukraine

    N. S. Boltovets

  3. Elma-Malachite Close Corporation, Zelenograd, 124460, Russia

    Yu. N. Sveshnikov

Authors
  1. A. E. Belyaev
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  2. N. S. Boltovets
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  3. R. V. Konakova
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  4. V. V. Milenin
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  5. Yu. N. Sveshnikov
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  6. V. N. Sheremet
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Corresponding author

Correspondence to R. V. Konakova.

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Original Russian Text © A.E. Belyaev, N.S. Boltovets, R.V. Konakova, V.V. Milenin, Yu.N. Sveshnikov, V.N. Sheremet, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 4, pp. 467–475.

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Belyaev, A.E., Boltovets, N.S., Konakova, R.V. et al. Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons. Semiconductors 44, 448–456 (2010). https://doi.org/10.1134/S106378261004007X

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  • DOI: https://doi.org/10.1134/S106378261004007X

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