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The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals

  • Electrical and Optical Properties of Semiconductors
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Abstract

On the basis of the results of complex investigations (photoluminescence, x-ray fluorescence, and infrared spectroscopy), the features of emission-spectra formation are shown under the change in the type (Fe, Cu, and Si) and concentration of background impurities appearing during both growth and treatment of bulk crystals by grinding and polishing. Special attention is given to the concentration and types of bonds with hydrogen-the basic impurity preventing the formation of crystals with the p-type conductivity.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, St. Petersburg, 194021, Russia

    M. M. Mezdrogina, E. Yu. Danilevskii, R. V. Kuz’min, N. K. Poletaev & I. N. Trapeznikova

  2. Moscow State University, Moscow, 119899, Russia

    M. V. Chukichev

  3. Russian State Pedagogical University, St. Petersburg, 191186, Russia

    G. A. Bordovskii & A. V. Marchenko

  4. St. Petersburg State Polytechnical University, St. Petersburg, 195021, Russia

    M. V. Eremenko

Authors
  1. M. M. Mezdrogina
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  2. E. Yu. Danilevskii
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  3. R. V. Kuz’min
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  4. N. K. Poletaev
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  5. I. N. Trapeznikova
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  6. M. V. Chukichev
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  7. G. A. Bordovskii
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  8. A. V. Marchenko
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  9. M. V. Eremenko
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Corresponding author

Correspondence to M. M. Mezdrogina.

Additional information

Original Russian Text © M.M. Mezdrogina, E.Yu. Danilevskii, R.V. Kuz’min, N.K. Poletaev, I.N. Trapeznikova, M.V. Chukichev, G.A. Bordovskii, A.V. Marchenko, M.V. Eremenko, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 4, pp. 445–451.

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Mezdrogina, M.M., Danilevskii, E.Y., Kuz’min, R.V. et al. The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals. Semiconductors 44, 426–431 (2010). https://doi.org/10.1134/S1063782610040032

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  • DOI: https://doi.org/10.1134/S1063782610040032

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