Abstract
The results of the study of features of the Ge film transition from two- to three-dimensional growth in different SiGe/Si(001) heterostructures with buried stressed layers are presented. It is shown that deposition of a stressed planar SiGe layer results in a significant decrease in the critical thickness of two-dimensional Ge growth. It was detected that the effect of SiGe layers on Ge film growth is very significant not only in the case of growth directly on the strained SiGe layer, but also if this layer is capped by an unstrained Si layer to thicknesses of ∼3.5 nm. It is shown that the model in which the effect of buried strained SiGe layers is taken into account by introducing the phenomenological parameter “decay length of the effective elastic energy” allows description of experimental result data with good accuracy.
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Original Russian Text © Yu.N. Drozdov, A.V. Novikov, M.V. Shaleev, D.V. Yurasov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 4, pp. 538–543.
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Drozdov, Y.N., Novikov, A.V., Shaleev, M.V. et al. Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers. Semiconductors 44, 519–524 (2010). https://doi.org/10.1134/S1063782610040196
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DOI: https://doi.org/10.1134/S1063782610040196