Abstract
In the adiabatic approximation in the context of the modified effective mass approach, in which the reduced exciton effective mass μ = μ(a) is a function of the radius a of the semiconductor quantum dot, an expression for the exciton binding energy E ex(a) in the quantum dot is derived. It is found that, in the CdSe and CdS quantum dots with the radii a comparable to the Bohr exciton radii a ex, the exciton binding energy E ex(a) is substantially (respectively, 7.4 and 4.5 times) higher than the exciton binding energy in the CdSe and CdS single crystals.
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Original Russian Text © S.I. Pokutnii, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 4, pp. 507–512.
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Pokutnii, S.I. Exciton binding energy in semiconductor quantum dots. Semiconductors 44, 488–493 (2010). https://doi.org/10.1134/S1063782610040147
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DOI: https://doi.org/10.1134/S1063782610040147