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Ordered arrays of Si nanocrystals in SiO2: Structural, optical, and electronic properties

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Abstract

It is found that irradiation of SiO2 layers containing Si nanocrystals with high-energy heavy ions induces profound structural modifications—specifically, the formation of vertically ordered arrays of nanocrystals along the ion tracks. This effect results in substantial changes in the electrical properties (the conductivity and capacitance—voltage characteristics) and optical (photoluminescence) properties of the layers containing nanocrystals.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    I. V. Antonova

  2. Joint Institute for Nuclear Research, Dubna, Moscow oblast, 141980, Russia

    V. A. Skuratov

  3. Racah Institute of Physics, Hebrew University, Jerusalem, 91904, Israel

    J. Jedrzejewski & I. Balberg

Authors
  1. I. V. Antonova
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  2. V. A. Skuratov
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  3. J. Jedrzejewski
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  4. I. Balberg
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Corresponding author

Correspondence to I. V. Antonova.

Additional information

Original Russian Text © I.V. Antonova, V.A. Skuratov, J. Jedrzejewski, I. Balberg, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 4, pp. 501–506.

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Antonova, I.V., Skuratov, V.A., Jedrzejewski, J. et al. Ordered arrays of Si nanocrystals in SiO2: Structural, optical, and electronic properties. Semiconductors 44, 482–487 (2010). https://doi.org/10.1134/S1063782610040135

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  • DOI: https://doi.org/10.1134/S1063782610040135

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