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Influence of the defect structure of γ-La2(1 − x)Nd2x S3 crystals on their spectroscopic properties

  • Electrical and Optical Properties of Semiconductors
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Abstract

The photoluminescence and Raman scattering of undoped γ-Ln2S3 single crystals (Ln is a rare earth ion) and the decay kinetics of the 4 F 3/2 level of Nd ions in these crystals have been investigated. The distortion of the decay curve of the Nd 4 F 3/2 level upon excitation by light with λ = 0.53 μm is explained.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Azerbaijan, AZ 1143, Baku, Azerbaijan

    A. A. Mamedov

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  1. A. A. Mamedov
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Correspondence to A. A. Mamedov.

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Original Russian Text © A.A. Mamedov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 4, pp. 440–444.

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Mamedov, A.A. Influence of the defect structure of γ-La2(1 − x)Nd2x S3 crystals on their spectroscopic properties. Semiconductors 44, 421–425 (2010). https://doi.org/10.1134/S1063782610040020

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  • DOI: https://doi.org/10.1134/S1063782610040020

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