Model of boron diffusion from gas phase in silicon carbide O. V. AleksandrovE. N. Mokhov Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 18 June 2011 Pages: 705 - 712
Electronic structure and spectral characteristics of Zn-substituted clathrate silicides N. A. BorshchN. S. PereslavtsevaS. I. Kurganskii Electronic Properties of Semiconductors 18 June 2011 Pages: 713 - 723
Energy of impurity resonance states in lead telluride with different contents of thallium impurity S. A. NemovYu. I. RavichV. A. Korchagin Electronic Properties of Semiconductors 18 June 2011 Pages: 724 - 726
Vacancy model of micropipe annihilation in epitaxial silicon carbide layers S. Yu. DavydovA. A. Lebedev Electronic Properties of Semiconductors 18 June 2011 Pages: 727 - 730
Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters A. V. ErshovD. I. TetelbaumI. A. Karabanova Spectroscopy, Interaction with Radiation 18 June 2011 Pages: 731 - 737
Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures K. D. ShcherbachevV. T. BublikD. M. Pazhin Spectroscopy, Interaction with Radiation 18 June 2011 Pages: 738 - 742
Resonance propagation of electrons through three-barrier structures in a two-frequency electric field A. B. Pashkovskii Surfaces, Interfaces, and Thin Films 18 June 2011 Pages: 743 - 748
Physical properties of SnS thin films fabricated by hot wall deposition S. A. BashkirovV. F. GremenokV. A. Ivanov Surfaces, Interfaces, and Thin Films 18 June 2011 Pages: 749 - 752
Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures V. P. KladkoA. V. KuchukD. Yu. Kazantsev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 June 2011 Pages: 753 - 760
Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields J. PoželaK. PoželaV. Jucienė Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 June 2011 Pages: 761 - 765
Excitonic spectrum of the ZnO/ZnMgO quantum wells M. A. BobrovA. A. ToropovA. Waag Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 June 2011 Pages: 766 - 770
Features of obtaining diluted magnetic semiconductors in the system of narrow-gap GaInAsSb alloys K. D. MoiseevV. P. LesnikovV. Sanchez-Resendiz Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 June 2011 Pages: 771 - 775
Circular polarization of the photoluminescence from a system of two-dimensional A + centers in a magnetic field P. V. PetrovYu. L. IvánovN. S. Averkiev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 June 2011 Pages: 776 - 782
Impurity centers of tin in glassy arsenic chalcogenides G. A. BordovskyA. Yu. DashinaE. I. Terukov Amorphous, Vitreous, and Organic Semiconductors 18 June 2011 Pages: 783 - 787
Anomalous long-term degradation of photoluminescence in porous silicon layers D. F. TimokhovF. P. Timokhov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 18 June 2011 Pages: 788 - 791
High-efficiency (η = 39.6%, AM 1.5D) cascade of photoconverters in solar splitting systems V. P. KhvostikovA. S. VlasovV. M. Andreev Physics of Semiconductor Devices 18 June 2011 Pages: 792 - 797
Features of dynamic acoustically induced modification of photovoltaic parameters of silicon solar cells O. Ya. Olikh Physics of Semiconductor Devices 18 June 2011 Pages: 798 - 804
Edge photoluminescence of single-crystal silicon with a p-n junction: Structures produced by high-efficiency solar cell technology A. M. Emel’yanov Physics of Semiconductor Devices 18 June 2011 Pages: 805 - 810
Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds P. N. BrunkovA. A. GutkinS. G. Konnikov Physics of Semiconductor Devices 18 June 2011 Pages: 811 - 817
Matrices of 960-nm vertical-cavity surface-emitting lasers N. A. MaleevA. G. KuzmenkovV. M. Ustinov Physics Of Semiconductor Devices 18 June 2011 Pages: 818 - 821
Fabrication of ordered GaAs nanowhiskers using electron-beam lithography I. P. SoshnikovD. E. Afanas’evV. M. Ustinov Fabrication, Treatment, and Testing of Materials and Structures 18 June 2011 Pages: 822 - 827
Fabrication of improved-quality seed crystals for growth of bulk silicon carbide M. G. MynbaevaP. L. AbramovYu. N. Makarov Fabrication, Treatment, and Testing of Materials and Structures 18 June 2011 Pages: 828 - 831
A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “a statistical method of deep-level transient spectroscopy in semiconductors” N. A. Yarykin Fabrication, Treatment, and Testing of Materials and Structures 18 June 2011 Pages: 832 - 834
Yurii Aronovich Goldberg (1939–2011) O. V. KonstantinovA. M. Samsonov Personalia 18 June 2011 Pages: 835 - 835
Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiO x Films” N. A. VlasenkoP. F. OleksenkoM. A. Mukhlyo Errata 18 June 2011 Pages: 836 - 836
