Abstract
Nanotechnology of obtainment of diluted magnetic semiconductors based on the GaInAsSb compounds is developed using the laser deposition of Mn atoms on the surface of the epitaxial layer of a quaternary alloy obtained by liquid-phase epitaxy. Fabricated heterostructures were studied using high-resolution X-ray diffraction for the Bragg and grazing diffraction geometries, and the layer-by-layer analysis is performed by secondary-ion mass spectrometry. It is established that the near-boundary region of the Ga0.96In0.04As0.11Sb0.89 layer near the deposition surface of atomic Mn exhibits the presence of a quinary compound with Mn atoms in the lattice and Mn3As2-type binary inclusions. Saturation of the GaIn(Mn)AsSb multicomponent diluted semiconductor with the Mn compounds makes it possible to specify the concentration of the magnetic impurity in the crystal and control the magnetic properties of the heterostructure.
Similar content being viewed by others
References
K. W. Edmonds, P. Boguslavski, K. Y. Wang, R. P. Campion, S. N. Novikov, N. R. S. Farley, B. L. Gallagher, C. T. Foxon, M. Sawicki, T. Dietl, M. Buongiorno Nardelli, and J. Bernholc, Phys. Rev. Lett. 92, 037201 (2004).
T. Schallenberg and H. Munekata, Appl. Phys. Lett. 89, 042507 (2006).
H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, Nature (London) 408, 944 (2000).
S. Koshihara, A. Oiwa, M. Hirasawa, S. Katsumoto, Y. Iye, C. Urano, H. Takagi, and H. Munekata, Phys. Rev. Lett. 78, 4617 (1997).
H. Ohno, J. Magn. Magn. Mater. 200, 110 (1999).
T. S. Lagunova, T. I. Voronina, M. P. Mikhailova, K. D. Moiseev, E. Samokhin, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. 37, 905 (2003) [Semiconductors 37, 876 (2003)].
T. Slupinski, H. Munekata, and A. Oiwa, Appl. Phys. Lett. 80, 1592 (2002).
A. M. Nazmul, T. Amemiya, Y. Shuto, S. Sugahara, and M. Tanaka, Phys. Rev. Lett. 95, 017201 (2005).
M. P. Mikhailova, K. D. Moiseev, and Yu. P. Yakovlev, Semicond. Sci. Technol. 19, R109 (2004).
V. A. Berezovets, K. D. Moiseev, M. P. Mikhailova, R. V. Parfeniev, Yu. P. Yakovlev, and V. I. Nizhankovskii, Fiz. Nizk. Temp. 33, 194 (2001) [J. Low Temp. Phys. 33, 137 (2001)].
R. V. Parfeniev, K. D. Moiseev, V. A. Berezovets, N. S. Averkiev, M. P. Mikhailova, V. Nizhankovskii, and D. Kaczorowski, J. Magn. Magn. Mater. 321, 712 (2009).
Yu. A. Danilov, E. S. Demidov, Yu. N. Drozdov, V. P. Lesnikov, and V. V. Podol’skii, Fiz. Tekh. Poluprovodn. 39, 8 (2005) [Semiconductors 39, 4 (2005)].
E. S. Demidov, V. V. Podol’skii, V. P. Lesnikov, M. V. Sapozhnikov, D. V. Druzhnov, S. N. Gusev, B. A. Gribkov, D. O. Filatov, Yu. S. Stepanova, and S. A. Levchuk, Zh. Eksp. Teor. Fiz. 133, 1 (2008) [JETP 106, 110 (2008)].
Y. Gao, J. Appl. Phys. 64, 3760 (1988).
J. M. Schroer, H. Gnaser, and H. Oechsner, in Proceedings of the 9th Intern. Conference on Second. Ion Mass Spectrometry, Yokohama, Japan, 7–12 Nov. 1993, p. 386.
K. D. Moiseev, A. A. Sitnikova, N. N. Faleev, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. 34, 1438 (2000) [Semiconductors 34, 1376 (2000)].
National Bur. Stand. (U.S.). Circ. 539(9), 30 (1956).
National Bur. Stand (U.S.). Monogr. 25(3), 35 (1964).
A. N. Baranov, A. M. Litvak, K. D. Moiseev, V. V. Sherstnev, and Yu. P. Yakovlev, Zh. Prikl. Khim. 67, 1951 (1994).
L. Dietrich, W. Jeitschko, and M. Moller, Z. Kristallogr. 190, 259 (1990).
K. D. Moiseev, A. Krier, and Yu. P. Yakovlev, J. Appl. Phys. 90, 3988 (2001).
T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. F. Lipaev, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. 40, 519 (2006) [Semiconductors 40, 503 (2006)].
T. Jungwirth, J. Sinova, J. Mašek, J. Kučera, and A. H. Macdonald, Rev. Mod. Phys. 78, 809 (2006).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © K.D. Moiseev, V.P. Lesnikov, V.V. Podolski, Yu. Kudriavtsev, O. Kudriavtseva, A. Escobosa, V. Sanchez-Resendiz, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 6, pp. 788–793.
Rights and permissions
About this article
Cite this article
Moiseev, K.D., Lesnikov, V.P., Podolski, V.V. et al. Features of obtaining diluted magnetic semiconductors in the system of narrow-gap GaInAsSb alloys. Semiconductors 45, 771–775 (2011). https://doi.org/10.1134/S1063782611060145
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782611060145