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Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

  • Physics of Semiconductor Devices
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Abstract

The depth distribution of free carriers over the HEMT structures with quantum-well layers is studied by electrochemical capacitance-voltage profiling. It is shown that the actual distribution of the concentration of free carriers and their energy spectrum in the HEMT structure channel can be obtained by numerical simulation of the results of profiling based on the self-consistent solution of one-dimensional Schrödinger and Poisson equations.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    P. N. Brunkov, A. A. Gutkin, M. E. Rudinsky, O. I. Ronghin, A. A. Sitnikova, A. A. Shakhmin, B. Ya. Ber, D. Yu. Kazantsev & S. G. Konnikov

  2. Nanotechnology Research and Education Center, St. Petersburg Academic University, Russian Academy of Sciences, ul. Khlopina 8/3, St. Petersburg, 195220, Russia

    A. Yu. Egorov

  3. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Institutskaya ul. 6, Chernogolovka, Moscow oblast, 142432, Russia

    V. E. Zemlyakov

Authors
  1. P. N. Brunkov
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  2. A. A. Gutkin
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  3. M. E. Rudinsky
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  4. O. I. Ronghin
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  5. A. A. Sitnikova
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  6. A. A. Shakhmin
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  7. B. Ya. Ber
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  8. D. Yu. Kazantsev
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  9. A. Yu. Egorov
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  10. V. E. Zemlyakov
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  11. S. G. Konnikov
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Corresponding author

Correspondence to P. N. Brunkov.

Additional information

Original Russian Text © P.N. Brunkov, A.A. Gutkin, M.E. Rudinsky, O.I. Ronghin, A.A. Sitnikova, A.A. Shakhmin, B.Ya. Ber, D.Yu. Kazantsev, A.Yu. Egorov, V.E. Zemlyakov, S.G. Konnikov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 6, pp. 829–835.

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Brunkov, P.N., Gutkin, A.A., Rudinsky, M.E. et al. Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds. Semiconductors 45, 811–817 (2011). https://doi.org/10.1134/S1063782611060078

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  • DOI: https://doi.org/10.1134/S1063782611060078

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