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A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “a statistical method of deep-level transient spectroscopy in semiconductors”

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References

  1. E. A. Tatokhin, A. V. Kadantsev, A. E. Bormontov, and V. G. Zadorozhnii, Fiz. Tekh. Poluprovodn. 44, 1031 (2010) [Semiconductors 44, 997 (2010)].

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  2. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).

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  3. L. S. Berman and A. A. Lebedev, Deep-Level Transient Spectroscopy in Semiconductors (Nauka, Leningrad, 1981) [in Russian].

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  4. E. A. Tatokhin, A. V. Kadantsev, A. E. Bormontov, and V. G. Zadorozhnii, Vestn. Voronezh. State Tekh. Univ. 5, 40 (2009).

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    N. A. Yarykin

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  1. N. A. Yarykin
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Correspondence to N. A. Yarykin.

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Original Russian Text © N.A. Yarykin, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 6, pp. 852–854.

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Yarykin, N.A. A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “a statistical method of deep-level transient spectroscopy in semiconductors”. Semiconductors 45, 832–834 (2011). https://doi.org/10.1134/S106378261106025X

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  • DOI: https://doi.org/10.1134/S106378261106025X

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