Abstract
The main systematic features of degradation of photoluminescence of porous silicon layers during long-term storage in air are studied. A profound increase in the photoluminescence intensity and a shift of the photoluminescence peak to shorter wavelengths in the optical spectra are observed for all samples. It is found that the degree of degradation depends on the initial crystallographic orientation of the silicon substrate. The decrease in the average diameters of silicon nanoclusters in porous silicon samples is attributed to chemical processes that occur at the developed porous surface with participation of atmospheric oxygen.
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References
L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
A. G. Gullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
D. F. Timokhov and F. P. Timokhov, Semicond. Phys. Quant. Electron. Optoelectron. 6, 307 (2003).
D. F. Timokhov and F. P. Timokhov, Microelectron. Eng. 81, 288 (2005).
L. V. Belyakov, T. L. Makarova, V. I. Sakharov, I. E. Serenkov, and O. M. Sreseli, Fiz. Tekh. Poluprovodn. 32, 1122 (1998) [Semiconductors 32, 1003 (1998)].
E. A. Shelonin, M. V. Naidenkova, A. M. Khort, A. G. Yakovenko, A. A. Gevelesiani, and I. E. Maronchuk, Fiz. Tekh. Poluprovodn. 32, 494 (1998) [Semiconductors 32, 443 (1998)].
B. R. Dzhumaev, Fiz. Tekh. Poluprovodn. 33, 1379 (1999) [Semiconductors 33, 1247 (1999)].
S. A. Gavrilov, A. I. Belogorokhov, and L. I. Belogorokhova, Fiz. Tekh. Poluprovodn. 36, 104 (2002) [Semiconductors 36, 8 (2002)].
M. G. Lisachenko, E. A. Konstantinov, V. Yu. Timoshenko, and P. K. Kashkarov, Fiz. Tekh. Poluprovodn. 36, 344 (2002) [Semiconductors 36, 325 (2002)].
E. B. Kaganovich, I. M. Kizyak, S. I. Kirillova, E. G. Manoilov, and V. E. Primachenko, Fiz. Tekh. Poluprovodn. 36, 1105 (2002) [Semiconductors 36, 1027 (2002)].
E. V. Astrova, V. V. Ratnikov, R. F. Vitman, A. A. Lebedev, A. D. Remenyuk, and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. 31, 1261 (1997) [Semiconductors 31, 1084 (1997)].
V. F. Agekyan, A. M. Aprelev, R. Laikho, and Yu. A. Stepanov, Fiz. Tverd. Tela 42, 1393 (2000) [Phys. Solid State 42, 1431 (2000)].
A. M. Orlov, A. A. Skvortsov, A. G. Klementiev, and A. V. Sinyaev, Pis’ma Zh. Tekh. Fiz. 27, 76 (2001) [Tech. Phys. Lett. 27, 77 (2001)].
L. L. Fedorenko, A. D. Sardarly, E. B. Kaganovich, S. V. Svechnikov, S. P. Dikii, and S. V. Baranets, Fiz. Tekh. Poluprovodn. 31, 6 (1997) [Semiconductors 31, 4 (1997)].
V. V. Filippov, V. P. Bondarenko, and P. P. Pershukevich, Fiz. Tekh. Poluprovodn. 31, 1135 (1997) [Semiconductors 31, 974 (1997)].
Yu. P. Pripyatinskii, V. A. Semenovich, N. I. Klyui, and A. G. Rozhin, Zh. Tekh. Fiz. 68, 83 (1998) [Tech. Phys. 43, 423 (1998)].
A. M. Orlov and A. V. Sindyaev, Zh. Tekh. Fiz. 69, 135 (1999) [Tech. Phys. 44, 124 (1999)].
E. V. Astrova, V. B. Voronkov, A. D. Remenyuk, V. A. Tolmachev, and V. B. Shuman, Fiz. Tekh. Poluprovodn. 33, 1264 (1999) [Semiconductors 33, 1149 (1999)].
X. S. Xhen, J. J. Zhao, and G. G. Wang, Phys. Lett. A 212, 285 (1996).
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Original Russian Text © D.F. Timokhov, F.P. Timokhov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 6, pp. 806–809.
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Timokhov, D.F., Timokhov, F.P. Anomalous long-term degradation of photoluminescence in porous silicon layers. Semiconductors 45, 788–791 (2011). https://doi.org/10.1134/S1063782611060248
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DOI: https://doi.org/10.1134/S1063782611060248