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Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The field dependence of drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures is calculated by the Monte Carlo method. The influence of varying the molar fraction of Al in the composition of the Al x Ga1 − x As and Al x In1 − x As barriers of the quantum well on the mobility and drift velocity of electrons in high electric fields is studied. It is shown that the electron mobility rises as the fraction x of Al in the barrier composition is decreased. The maximum mobility in the In0.5Ga0.5As/In0.8Al0.2As quantum wells exceeds the mobility in a bulk material by a factor of 3. An increase in fraction x of Al in the barrier leads to an increase in the threshold field E th of intervalley transfer (the Gunn effect). The threshold field is E th = 16 kV/cm in the In0.5Ga0.5As/Al0.5In0.5As heterostructures and E th = 10 kV/cm in the In0.2Ga0.8As/Al0.3Ga0.7As heterostructures. In the heterostructures with the lowest electron mobility, E th = 2–3 kV/cm, which is lower than E th = 4 kV/cm in bulk InGaAs.

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Authors and Affiliations

  1. Semiconductor Physics Institute, Center for Physical Sciences and Technology, LT-01108, Vilnius, Lithuania

    J. Požela, K. Požela, R. Raguotis & V. Jucienė

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  1. J. Požela
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  2. K. Požela
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  3. R. Raguotis
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  4. V. Jucienė
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Correspondence to J. Požela.

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Original Russian Text © J. Po ela, K. Požela, R. Raguotis, V. Jucienė, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 6, pp. 778–782.

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Požela, J., Požela, K., Raguotis, R. et al. Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields. Semiconductors 45, 761–765 (2011). https://doi.org/10.1134/S1063782611060212

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  • DOI: https://doi.org/10.1134/S1063782611060212

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