Skip to main content
SpringerLink
Log in

Fabrication of ordered GaAs nanowhiskers using electron-beam lithography

  • Fabrication, Treatment, and Testing of Materials and Structures
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The formation of ordered GaAs nanowhiskers obtained on GaAs (111)As substrates using electron-beam lithography and catalytic molecular-beam epitaxy (MBE) growth is studied experimentally. The main parameters of the e-beam lithographic process necessary for obtaining Au catalyst droplets 10–150 nm in size are determined. It is established that subsequent MBE growth proceeds predominantly by the diffusion mechanism. In the regions subjected to a repeated e-beam exposure after the lift-off process, suppression of nanowhisker growth can take place.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. I. Persson, L. E. Froberg, L. Samuelson, and H. Linke, Nanotechnology 20, 225304 (2009).

    Article  ADS  Google Scholar 

  2. V. G. Dubrovskii, G. E. Cirlin, and V. M. Ustinov, Fiz. Tekh. Poluprovodn. 43, 1585 (2009) [Semiconductors 43, 1539 (2009)].

    Google Scholar 

  3. G. E. Cirlin, V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, Yu. B. Samsonenko, A. D. Bouravleuv, J. C. Harmand, and F. Glas, Phys. Status Solidi RRL 3(4), 112 (2009).

    Article  Google Scholar 

  4. X. Mei, D. Kim, H. E. Ruda, and Q. X. Guo, Appl. Phys. Lett. 81, 361 (2002).

    Article  ADS  Google Scholar 

  5. J. Noborisaka, J. Motohisa, S. Hara, and T. Fukui, Appl. Phys. Lett. 87, 093109 (2005).

    Article  ADS  Google Scholar 

  6. C. M. Sotomayor Torres, F. D. Wang, N. N. Ledentsov, and Y.-S. Tang, Proc. SPIE 2141, 2 (1994).

    Article  ADS  Google Scholar 

  7. Optical properties of Low Dimensional Semiconductors, Ed. by G. Abstreiter, A. Aydinli, and J.-P. Leburton, NATO ASI Ser. E: Applied Sciences (Kluwer Acad., Dordrecht, The Netherlands, 1997), v. 344.

    Google Scholar 

  8. M.-F. Ng, L. Zhou, S.-W. Yang, L. Y. Sim, V. B. C. Tan, and P. Wu, Phys. Rev. B 76, 155435 (2007).

    Article  ADS  Google Scholar 

  9. J. N. Randall, M. A. Reed, T. M. Moore, R. J. Matyi, and J. W. Lee, J. Vac. Sci. Technol. B 6, 302 (1998).

    Article  Google Scholar 

  10. H. E. Ruda, J. C. Polanyi, J. S. Y. Yang, Z. Wu, U. Philipose, T. Xu, S. Yang, K. L. Kavanagh, J. Q. Liu, L. Yang, Y. Wang, K. Robbie, J. Yang, K. Kaminska, D. G. Cooke, F. A. Hegmann, A. J. Budz, and H. K. Haugen, Nanoscale Res. Lett. 1, 99 (2006).

    Article  ADS  Google Scholar 

  11. A. I. Persson, L. E. Froberg, L. Samuelson, and H. Linke, Nanotechnology 20, 225–304 (2009).

    Article  Google Scholar 

  12. I. A. Dmitriev and R. A. Suris, Phys. Status Solidi A 202, 987 (2005).

    Article  ADS  Google Scholar 

  13. N. N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I. P. Soshnikov, V. A. Shchukin, V. M. Ustinov, A. Y. Egorov, A. E. Zhukov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. P. Semyangin, D. Bimberg, and Z. I. Alferov, J. Electron. Mater. 30, 463 (2001).

    Article  ADS  Google Scholar 

  14. D. Litvinov, A. Rosenauer, D. Gerthsen, N. N. Ledentsov, D. Bimberg, G. A. Ljubas, V. V. Bolotov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, and I. P. Soshnikov, Appl. Phys. Lett. 81, 1080 (2002).

    Article  ADS  Google Scholar 

  15. V. A. Shchukin, N. N. Ledentsov, A. Hoffmann, D. Bimberg, I. P. Soshnikov, B. V. Volovik, V. M. Ustinov, D. Litvinov. and D. Gerthsen, Phys. Status Solidi B 224, 503 (2001).

    Article  ADS  Google Scholar 

  16. V. G. Dubrovskii, G. E. Cirlin, I. P. Soshnikov, A. A. Tonkikh, N. V. Sibirev, Yu. B. Samsonenko, and V. M. Ustinov, Phys. Rev. B 71, 205325 (2005).

    Article  ADS  Google Scholar 

  17. B. Charlot, W. Sun, K. Yamashita, H. Fujita, and H. Toshiyoshi, J. Micromech. Microeng. 18, 045005 (2008).

    Article  ADS  Google Scholar 

  18. Y. Gebremichael, A. Sanchez, X. Borrise, M. Schmidt, A. R. Goci, M. I. Alonso, R. Rurali, J. Sune, X. Cartoixa, and F. Perez-Murano, Microelectron. Eng. 87, 1479 (2010).

    Article  Google Scholar 

  19. B. S. Simpkins, P. E. Pehrsson, M. L. Taheri, and R. M. Stroud, J. Appl. Phys. 101, 094305 (2007).

    Article  ADS  Google Scholar 

  20. H.-Q. Zhao, S. Kasai, Y. Shiratori, and T. Hashizume, Nanotechnology 20, 245203 (2009).

    Article  ADS  Google Scholar 

  21. J. B. Cui, Sci. China Ser. E: Technol. Sci. 52, 313 (2009).

    Article  Google Scholar 

  22. E. I. Givargizov, Kristallografiya 54, 665 (2009) [Crystallogr. Rep. 54, 625 (2009)].

    ADS  Google Scholar 

  23. I. P. Soshnikov, G. E. Cirlin, A. A. Tonkikh, V. N. Nevedomskii, Yu. B. Samsonenko, and V. M. Ustinov, Fiz. Tverd. Tela 49, 1373 (2007) [Phys. Solid State 49, 1440 (2007)].

    Google Scholar 

  24. G. E. Cirlin, V. G. Dubrovskii, N. V. Sibirev, I. P. Soshnikov, Yu. B. Samosnenko, A. A. Tonkikh, and V. M. Ustinov, Fiz. Tekh. Poluprovodn. 39, 587 (2005) [Semiconductors 39, 547 (2005)].

    Google Scholar 

  25. I. P. Soshnikov, Pis’ma Zh. Tekh. Fiz. 31(15), 29 (2005) [Tech. Phys. Lett. 31, 644 (2005)].

    Google Scholar 

  26. M. Tchernycheva, G. E. Cirlin, G. Patriarche, L. Travers, V. Zwiller, U. Perinetti, and J.-C. Harmand, Nano Lett. 7, 1500 (2007).

    Article  ADS  Google Scholar 

  27. M. T. Bjork, B. J. Ohlsson, T. Sass, A. I. Persson, C. Thelander, M. H. Magnusson, K. Deppert, L. R. Wallenberg, and L. Samuelson, Appl. Phys. Lett. 80, 1058 (2001).

    Article  ADS  Google Scholar 

  28. W. Seifert, M. Borgstrom, K. Deppert, K. A. Dick, J. Johansson, M. W. Larsson, T. Martensson, N. Skold, C. P. T. Svensson, B. A. Wacaser, L. R. Wallenberg, and L. Samuelson, J. Cryst. Growth 272, 211 (2004).

    Article  ADS  Google Scholar 

  29. T. Bryllert, L. E. Wernersson, T. Lowgren, and L. Samuelson, Nanotechnology 17, S227 (2006).

    Article  ADS  Google Scholar 

  30. F. Glas, Phys. Rev. B 74, 121302 (2006).

    Article  ADS  Google Scholar 

  31. A. L. Roest, M. A. Verheijen, O. Wunnicke, S. Serafin, H. Wondergem, and E. P. A. M. Bakkers, Nanotechnology 17, S271 (2006).

    Article  ADS  Google Scholar 

  32. I. Park, Z. Li, A. P. Pisano, and R. S. Williams, Nanotechnology 21, 015501 (2010).

    Article  ADS  Google Scholar 

  33. I. P. Soshnikov, G. E. Cirlin, A. A. Tonkikh, Yu. B. Samsonenko, V. G. Dubrovskii, V. M. Ustinov, O. M. Gorbenko, D. Litvinov, and D. Gerthsen, Fiz. Tverd. Tela 47, 2121 (2005) [Phys. Solid State 47, 2213 (2005)].

    Google Scholar 

  34. Handbook of Microlithography, Micromachining, and Microfabrication, Ed. by P. Rai-Choudhury (SPIE Opt. Eng., Washington, 1997), vol. 1.

    Google Scholar 

  35. W. M. Moreau, Microlitography, in 2 parts (Plenum, New York, 1988; Mir, Moscow, 1990).

    Google Scholar 

  36. A. A. Tseng, C. Kuan, C. D. Chen, and K. J. Ma, IEEE Trans. Electron. Pack. Manufact. 26, 141 (2003).

    Article  Google Scholar 

  37. Ya. E. Geguzin and Yu. S. Kaganovskii, Usp. Fiz. Nauk 125, 489 (1978) [Sov. Phys. Usp. 21, 611 (1978)].

    Google Scholar 

  38. S. A. Kukushkin and V. V. Slezov, Disperse Systems on Solid Surfaces. Mechanisms of Formation of Thin Films (Evolutionary Approach) (Nauka, St.-Petersburg, 1996) [in Russian].

    Google Scholar 

  39. G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko, A. D. Bouravleuv, K. Durose, Y. Y. Proskuryakov, Budhikar Mendes, L. Bowen, M. A. Kaliteevski, R. A. Abram, and Dagou Zeze, Phys. Rev. B 82, 035302 (2010).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Nanotechnology Research and Education Center, St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, 195220, Russia

    I. P. Soshnikov, G. E. Cirlin, V. A. Petrov, Yu. B. Samsonenko, A. D. Bouravlev, A. I. Khrebtov & V. M. Ustinov

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. P. Soshnikov, G. E. Cirlin, V. A. Petrov, E. M. Tanklevskaya, Yu. B. Samsonenko, A. D. Bouravlev & V. M. Ustinov

  3. Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 190083, Russia

    G. E. Cirlin & Yu. B. Samsonenko

  4. Physics Faculty, St. Petersburg State University, St. Petersburg, 198504, Russia

    D. E. Afanas’ev

Authors
  1. I. P. Soshnikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. E. Afanas’ev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. G. E. Cirlin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. A. Petrov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. E. M. Tanklevskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Yu. B. Samsonenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. A. D. Bouravlev
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. A. I. Khrebtov
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. V. M. Ustinov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to I. P. Soshnikov.

Additional information

Original Russian Text © I.P. Soshnikov, D.E. Afanas’ev, G.E. Cirlin, V.A. Petrov, E.M. Tanklevskaya, Yu.B. Samsonenko, A.D. Bouravlev, A.I. Khrebtov, V.M. Ustinov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 6, pp. 840–846.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Soshnikov, I.P., Afanas’ev, D.E., Cirlin, G.E. et al. Fabrication of ordered GaAs nanowhiskers using electron-beam lithography. Semiconductors 45, 822–827 (2011). https://doi.org/10.1134/S1063782611060236

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782611060236

Keywords

Search

Navigation