Abstract
Sublimation epitaxy in a vacuum has been used to grow silicon carbide layers with a low defect concentration and with SiC wafers cut from single-crystal ingots produced by the modified Lely method serving as substrates. It is concluded on the basis of a comparative study of the distribution of structural defects in substrates and epitaxial layers that an isomorphic pair composed of an epitaxial layer and a single-crystal SiC substrate, which is a composite of materials produced by the same method (sublimation synthesis), but in different technological conditions, is promising for fabrication of improved-quality silicon carbide seed crystals.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Yu. M. Tairov and V. F. Tsvetkov, J. Cryst. Growth 43, 209 (1978).
J. Heindl, H. P. Strunk, V. D. Heydemann, and G. Pensl, Phys. Status Solidi A 162, 251 (1997).
S. Ha, N. T. Nuhfer, G. S. Rohrer, M. DeGraef, and M. Skowronski, J. Cryst. Growth 220, 308 (2000).
M. Dudley, X. R. Huang, W. Huang, A. Powell, S. Wang, P. Neudeck, and M. Skowronski, Appl. Phys. Lett. 75, 784 (1999).
H. Shiomi, H. Kinoshika, T. Furusho, T. Hayashi, M. Tajima, and E. Higashi, J. Cryst. Growth 292, 188 (2006).
Z. G. Herro, B. M. Epelbaum, M. Bickermann, C. Seitz, A. Magerl, and A. Winnacker, J. Cryst. Growth 275, 496 (2005).
J. Li, P. Filip, B. M. Epelbaum, X. Xu, M. Bickermann, and A. Winnacker, J. Cryst. Growth 308, 41 (2007).
Y. Shishkin and O. Kordina, J. Cryst. Growth 291, 317 (2006).
H.-J. Rost, M. Schidbauer, D. Sicke, and R. Formari, J. Cryst. Growth 290, 137 (2006).
D. Nakamura, I. Gunjishima, S. Yamaguchi, T. Ito, A. Okamoto, H. Kondo, S. Onda, and K. Takato, Nature 430, 1009 (2004).
D. Avrov, S. Dorozhkin, A. Lebedev, Yu. Tairov, A. Tregubova, and A. Fadeev, Fiz. Tekh. Poluprovodn. 43, 1288 (2009) [Semiconductors 43, 1248 (2009)].
S. Rendakova and V. Dmitriev, in Proceedings of the MRS 1999 Spring Meeting, San Francisco, Apr. 5–9, 1999, p. 308.
D. A. Bauman, A. V. Gavrilin, V. A. Ivantsov, A. M. Morozov, and N. I. Kuznetsov, Fiz. Tekh. Poluprovodn. 35, 1184 (2001) [Semiconductors 35, 1132 (2001)].
S. V. Rendakova, I. P. Nikitina, A. S. Tregubova, and V. A. Dmitriev, J. Electron. Mater. 27, 292 (1998).
H. Jacobson, R. Yakimova, M. Syväjärvi, A. Kakanakova-Georgieva, T. Tuomi, and E. Janzén, J. Cryst. Growth 256, 276 (2003).
N. S. Savkina, D. V. Davydov, A. M. Strel’chuk, A. S. Tregubova, C. Raynauld, J. P. Chante, M. L. Locatelli, D. Planson, J. Millan, P. Godignon, F. J. Campos, N. Nestres, J. Pascual, M. Badila, and G. Brereanu, Mater. Sci. Eng. B 77, 50 (2000).
M. Syvajarvi, R. Yakimova, and E. Janzen, J. Phys. Condens. Matter. 11, 10019 (1999).
J. H. van der Marwe, J. Electron. Mater. 20, 793 (1991).
H. Jacobson, J. Birch, C. Hallin, A. Henry, R. Yakimova, T. Tuomi, E. Janzén, and U. Lindefelt, Appl. Phys. Lett. 82, 3689 (2003).
X. Zhang, M. Skowronski, K. X. Liu, R. E. Stahlbush, J. J. Sumakeris, M. J. Paisley, and M. J. O’Loughlin, J. Appl. Phys. 102, 093520 (2007).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © M.G. Mynbaeva, P.L. Abramov, A.A. Lebedev, A.S. Tregubova, D.P. Litvin, A.V. Vasiliev, T.Yu. Chemekova, Yu.N. Makarov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 6, pp. 847–851.
Rights and permissions
About this article
Cite this article
Mynbaeva, M.G., Abramov, P.L., Lebedev, A.A. et al. Fabrication of improved-quality seed crystals for growth of bulk silicon carbide. Semiconductors 45, 828–831 (2011). https://doi.org/10.1134/S1063782611060157
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782611060157