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Matrices of 960-nm vertical-cavity surface-emitting lasers

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Abstract

Matrices of vertical-cavity surface-emitting lasers with individual addressing of elements and radiation output through a gallium arsenide substrate are implemented. Individual laser emitters with a current aperture diameter of 6–7 μm exhibit continuous-wave room-temperature lasing at a wavelength of 958–962 nm with threshold currents of 1.1–1.3 mA, differential efficiency of 0.5–0.8 mW/mA, and a maximum output power of 7.5–9 mW. The parameter variation of individual emitters within a matrix chip containing 5 × 7 elements does not exceed ±20%.

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Correspondence to N. A. Maleev.

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Original Russian Text © N.A. Maleev, A.G. Kuzmenkov, A.S. Shulenkov, S.A. Blokhin, M.M. Kulagina, Yu.M. Zadiranov, V.G. Tikhomirov, A.G. Gladyshev, A.M. Nadtochiy, E.V. Nikitina, J.A. Lott, V.N. Svede-Shvets, N.N. Ledentsov, V.M. Ustinov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 6, pp. 836–839.

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Maleev, N.A., Kuzmenkov, A.G., Shulenkov, A.S. et al. Matrices of 960-nm vertical-cavity surface-emitting lasers. Semiconductors 45, 818–821 (2011). https://doi.org/10.1134/S1063782611060133

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  • DOI: https://doi.org/10.1134/S1063782611060133

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