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Impurity centers of tin in glassy arsenic chalcogenides

  • Amorphous, Vitreous, and Organic Semiconductors
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Abstract

119Sn atoms produced by radioactive decay of 119Sb impurity atoms in the structure of As x S1 − x and As x Se1 − x glasses are stabilized in the form of Sn2+ and Sn4+ ions at arsenic sites and correspond to ionized states of the amphoteric two-electron center with negative correlation energy (Sn2+ is an ionized acceptor, and Sn4+ is an ionized donor), whereas the neutral state of the Sn3+ center is unstable. The fraction of Sn4+ states increases with chalcogen content in glass. 119Sn atoms produced by radioactive decay of 119mTe impurity atoms in the structure of As x S1 − x and As x Se1 − x glasses are stabilized at chalcogen sites (they are electrically inactive) and arsenic sites, and the fraction of arsenic atoms decreases with the chalcogen content in glass.

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Authors and Affiliations

  1. Alexander Herzen State Pedagogical University of Russia, ul. Moika 48, St. Petersburg, 191186, Russia

    G. A. Bordovsky, A. Yu. Dashina, A. V. Marchenko & P. P. Seregin

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    E. I. Terukov

Authors
  1. G. A. Bordovsky
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  2. A. Yu. Dashina
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  3. A. V. Marchenko
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  4. P. P. Seregin
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  5. E. I. Terukov
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Corresponding author

Correspondence to P. P. Seregin.

Additional information

Original Russian Text © G.A. Bordovsky, A.Yu. Dashina, A.V. Marchenko, P.P. Seregin, E.I. Terukov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 6, pp. 801–805.

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Bordovsky, G.A., Dashina, A.Y., Marchenko, A.V. et al. Impurity centers of tin in glassy arsenic chalcogenides. Semiconductors 45, 783–787 (2011). https://doi.org/10.1134/S1063782611060054

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  • DOI: https://doi.org/10.1134/S1063782611060054

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