Deformation of the surface of gallium arsenide during the deposition of gold T. A. BriantsevaD. V. LioubtchenkoYu. A. Ten Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 24 December 2011 Pages: 1525 - 1530
Morphology, elemental composition, and mechanical properties of polycrystalline CdTe layers I. V. KuriloH. A. IlchukN. V. Chekaylo Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 24 December 2011 Pages: 1531 - 1537
Space-charge-limited currents in an Se95As5 chalcogenide glass-like semiconductor system containing EuF3 impurities A. I. IsayevS. I. MekhtiyevaS. N. Qaribova Electronic Properties of Semiconductors 24 December 2011 Pages: 1538 - 1542
Effect of pressure on the electronic spectrum of indium arsenide I. K. KamilovS. F. GabibovA. Yu. Mollaev Electronic Properties of Semiconductors 24 December 2011 Pages: 1543 - 1549
Photopiezoelectric induction of resonant acoustic waves in semi-insulating gallium arsenide single crystals V. I. MitrokhinS. I. RembezaR. N. Antonov Electronic Properties of Semiconductors 24 December 2011 Pages: 1550 - 1554
Electrical properties of germanium-based insulator-semiconductor structures with an insulating layer of polynucleotides, and their monomer components on the surface A. M. YafyasovV. M. BakulevV. V. Bogevolnov Surfaces, Interfaces, and Thin Films 24 December 2011 Pages: 1555 - 1558
Optical properties of nanostructured lead sulfide films with a D03 cubic structure S. I. SadovnikovN. S. KozhevnikovaA. I. Gusev Surfaces, Interfaces, and Thin Films 24 December 2011 Pages: 1559 - 1570
Movement of the boundary of a p-n junction in GaAs:Si under gyrotronic irradiation G. A. SukachV. V. Kidalov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 24 December 2011 Pages: 1571 - 1574
Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures V. L. BerkovitsT. V. L’vovaV. P. Ulin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 24 December 2011 Pages: 1575 - 1579
Electron microscopy of GaAs Structures with InAs and as quantum dots V. N. NevedomskiiN. A. BertB. R. Semyagin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 24 December 2011 Pages: 1580 - 1582
Investigation of the structure of an amorphous As-Se semiconductor system by relaxation methods R. A. CastroV. A. BordovskyT. V. Taturevich Amorphous, Vitreous, and Organic Semiconductors 24 December 2011 Pages: 1583 - 1588
The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier A. K. ShestakovK. S. Zhuravlev Physics of Semiconductor Devices 24 December 2011 Pages: 1589 - 1599
Silicon ion implantation for growing structurally perfect silicon layers on sapphire V. M. VorotyntsevE. L. ShobolovV. A. Gerasimov Fabrication, Treatment, and Testing of Materials and Structures 24 December 2011 Pages: 1600 - 1603
Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO x :H 〈Er,O〉, by dc-magnetron deposition Yu. K. UndalovE. I. TerukovI. N. Trapeznikova Fabrication, Treatment, and Testing of Materials and Structures 24 December 2011 Pages: 1604 - 1616
Redistribution of components in the niobium-silicon system under high-temperature proton irradiation N. N. AfoninV. A. LogachevaA. M. Khoviv Fabrication, Treatment, and Testing of Materials and Structures 24 December 2011 Pages: 1617 - 1619