Abstract
The effect of chemical nitridation of GaAs substrates in a hydrazine-sulfide solution on the electrical characteristics of Au/GaAs Schottky structures has been studied. In nitridation of this kind, a solid passivating gallium nitride film with a monolayer thickness is formed on the surface of GaAs, providing almost direct contact between the semiconductor and the metal deposited on its surface. Au/GaAs structures fabricated on nitride substrates have ideality factors close to unity and are characterized by a narrow scatter of potential barrier heights. Prolonged heating of these structures at 350°C does not change these parameters. The data obtained show that the nitride monolayer formed on the GaAs surface upon treatment in hydrazidesulfide solutions effectively hinders atomic migration across the metal-semiconductor phase boundary.
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Original Russian Text © V.L. Berkovits, T.V. L’vova, V.P. Ulin, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 12, pp. 1637–1641.
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Berkovits, V.L., L’vova, T.V. & Ulin, V.P. Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures. Semiconductors 45, 1575–1579 (2011). https://doi.org/10.1134/S1063782611120037
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DOI: https://doi.org/10.1134/S1063782611120037